⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL33330 | 0.82 | — | — | |
| SCHEMBL2199064 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL8414677 | 0.67 | — | — | |
| Charcoal, Activated SCHEMBL407695 | 0.67 | — | — | |
| SCHEMBL8368424 | 0.67 | — | — | |
| SCHEMBL227138 | 0.67 | — | — | |
| SCHEMBL4326574 | 0.67 | — | — | |
| SCHEMBL17766196 | 0.67 | — | — | |
| SCHEMBL721061 | 0.67 | — | — | |
| SCHEMBL5996231 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230377901-A1 | METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES | APPLIED MATERIALS, INC. (US) | 2023-11-23 | — | — | US | claimed |
| US-11659703-B2 | Integrated circuit with embedded high-density and high-current SRAM macros | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-23 | — | — | US | claimed |
| US-20220278110-A1 | INTEGRATED CIRCUIT WITH EMBEDDED HIGH-DENSITY AND HIGH-CURRENT SRAM MACROS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-09-01 | — | — | US | claimed |
| CN-111977629-A | Synthetic method for coating carbon spheres with tungsten nitride and generating tungsten nitride nanorods in situ on carbon spheres | 中国科学院宁波材料技术与工程研究所 | 2020-11-24 | — | — | CN | claimed |
| EP-2580375-B1 | COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION | AVENI (FR) | 2016-09-28 | — | — | EP | claimed |
| US-8946047-B2 | Method for fabricating capacitor | SK Hynix Inc. (KR) | 2015-02-03 | — | — | US | claimed |
| CN-101443127-B | Application element for a rotary sprayer and associated operating method | DUERR SYSTEMS GMBH | 2013-08-28 | — | — | CN | claimed |
| US-20130168255-A1 | COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION | ALCHIMER (FR) | 2013-07-04 | — | — | US | claimed |
| EP-2580375-A1 | COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION | Alchimer (FR) | 2013-04-17 | — | — | EP | claimed |
| US-20100240188-A1 | METHOD FOR FABRICATING CAPACITOR | SK Hynix Inc. (KR) | 2010-09-23 | — | — | US | claimed |
| CN-101443127-A | Application element for a rotary sprayer and associated operating method | DUERR SYSTEMS GMBH (DE) | 2009-05-27 | — | — | CN | claimed |
| US-20070099375-A1 | Method for fabricating capacitor | HYNIX SEMICONDUCTOR INC. | 2007-05-03 | — | — | US | claimed |
| US-6617176-B1 | METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING METALLIZATION DIFFUSION BY FORMING A TEST SPECIMEN DEVICE AND USING A METAL PENETRATION MEASUREMENT TECHNIQUE FOR FABRICATING A PRODUCTION SEMICONDUCTOR DEVICE AND A TEST SPECIMEN DEVICE THEREBY FORMED | ADVANCED MICRO DEVICES, INC. | 2003-09-09 | — | — | US | claimed |
| US-20230377901-A1 | METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES | APPLIED MATERIALS, INC. (US) | 2023-11-23 | — | — | US | disclosed |
| US-20230301051-A1 | INTEGRATED CIRCUIT WITH EMBEDDED HIGH-DENSITY AND HIGH-CURRENT SRAM MACROS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-09-21 | — | — | US | disclosed |
| US-11659703-B2 | Integrated circuit with embedded high-density and high-current SRAM macros | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-23 | — | — | US | disclosed |
| CN-1983525-A | Method for improving adhesive strength of low-dielectric constant layer | ZHONGXIN INT IC MFG SHANGHAI (CN) | 2007-06-20 | — | — | CN | disclosed |
| US-20070134900-A1 | Method of improving adhesion strength of low dielectric constant layers | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2007-06-14 | — | — | US | disclosed |
| US-20070099375-A1 | Method for fabricating capacitor | HYNIX SEMICONDUCTOR INC. | 2007-05-03 | — | — | US | disclosed |
| US-6617176-B1 | METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING METALLIZATION DIFFUSION BY FORMING A TEST SPECIMEN DEVICE AND USING A METAL PENETRATION MEASUREMENT TECHNIQUE FOR FABRICATING A PRODUCTION SEMICONDUCTOR DEVICE AND A TEST SPECIMEN DEVICE THEREBY FORMED | ADVANCED MICRO DEVICES, INC. | 2003-09-09 | — | — | US | disclosed |