SCHEMBL702168

SCHEMBL702168

CCCCCC(CC)O[SiH2]c1ccc([SiH2]OC(CC)CCCCC)cc1

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LAP3 P28838 2/20 0.33
PRKCA P17252 1/20 0.33
PRKCD Q05655 1/20 0.33
PRSS1 P07477 1/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33
SLC2A1 P11166 2/20 0.33
NR1I2 O75469 1/20 0.32
SMPD1 P17405 3/20 0.32
FDPS P14324 4/20 0.31
OPRM1 P35372 1/20 0.31
BDKRB2 P30411 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703936 0.94 PRKCA (0.37) PRKCAPRKCDBDKRB2
SCHEMBL712785 0.90 DNM1 (0.33) LAP3PRKCAPRKCDPRSS1PRSS2
SCHEMBL705078 0.89 DNM1 (0.37) LAP3PRSS1PRSS2PRSS3SLC2A1
SCHEMBL707159 0.89 DNM1 (0.37) LAP3PRSS1PRSS2PRSS3SLC2A1
SCHEMBL705493 0.89 SLC2A1 (0.33) PRSS1PRSS2PRSS3SLC2A1OPRM1
SCHEMBL706776 0.87 SLC2A1 (0.35) LAP3PRSS1PRSS2PRSS3SLC2A1
SCHEMBL712793 0.86 PRKCA (0.34) PRKCAPRKCD
SCHEMBL706459 0.86 BDKRB2 (0.34) PRKCAPRKCDSLC2A1BDKRB2
SCHEMBL707559 0.82 BDKRB2 (0.32) PRKCAPRKCDBDKRB2
SCHEMBL710832 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed