Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.38 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.32 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.32 |
| ▸ | NPC1 | O15118 | 1/20 | 0.30 |
| ▸ | RAB9A | P51151 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17545708 | 0.98 | HTT (0.37) | HTTCYP4F2CYP4A11 | |
| SCHEMBL2601745 | 0.89 | CYP4F2 (0.32) | CYP4F2CYP4A11 | |
| SCHEMBL2607790 | 0.87 | — | — | |
| SCHEMBL106916 | 0.87 | HTT (0.45) | HTTCYP4F2CYP4A11NPC1RAB9A | |
| SCHEMBL11987562 | 0.86 | FGFR1 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL18431895 | 0.86 | CYP4F2 (0.37) | HTTCYP4F2CYP4A11 | |
| SCHEMBL26188254 | 0.86 | HTT (0.38) | HTTNPC1RAB9ASMN1; SMN2 | |
| SCHEMBL17853781 | 0.85 | — | — | |
| SCHEMBL2607807 | 0.84 | — | — | |
| SCHEMBL18557879 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 452 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-20230350290-A1 | PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230333478-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT | FUJIFILM CORPORATION (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080124653-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080118863-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-22 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, LPAR1, TLR7 | HTT 3918/4885CYP4F2 1598/4885CYP4A11 1265/4885 |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | C1R, AFF1, HRH3 | HTT 904/4885CYP4F2 639/4885CYP4A11 1909/4885 |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | RER1, AFF1, AFF4 | HTT 3191/4885CYP4F2 1438/4885CYP4A11 2063/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | HTT 3074/4885CYP4F2 767/4885CYP4A11 495/4885 |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, H1-2 | HTT 3017/4885CYP4F2 2956/4885CYP4A11 867/4885 |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, CHRM1 | HTT 3437/4885CYP4F2 2140/4885CYP4A11 951/4885 |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, H1-0, CA7 | HTT 3542/4885CYP4F2 1143/4885CYP4A11 1039/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.