Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 3/20 | 0.80 |
| ▸ | CA9 | Q16790 | 2/20 | 0.67 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.67 |
| ▸ | TSHR | P16473 | 1/20 | 0.67 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.67 |
| ▸ | CA6 | P23280 | 1/20 | 0.38 |
| ▸ | CA5A | P35218 | 1/20 | 0.38 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL165 | 0.89 | — | — | |
| SCHEMBL1512953 | 0.89 | — | — | |
| SCHEMBL9005288 | 0.89 | — | — | |
| SCHEMBL25235463 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL25266468 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL23632800 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL25267014 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL25223811 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL25267093 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 | |
| SCHEMBL25231872 | 0.80 | CA1 (0.80) | CA1CA9ALDH1A1TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1432853-B1 | PROCESS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM- CONTAINING NITRIDE | AMMONO SP ZOO (PL) | 2013-04-24 | — | — | EP | claimed |
| US-7252712-B2 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | AMMONO SP. Z O.O. (PL) | 2007-08-07 | — | — | US | claimed |
| EP-1770189-A2 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | AMMONO Sp.z o.o. (PL) | 2007-04-04 | — | — | EP | claimed |
| US-7160388-B2 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | NICHIA CORPORATION (JP) | 2007-01-09 | — | — | US | claimed |
| US-20040139912-A1 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | AMMONO SP. Z O.O. (PL) | 2004-07-22 | — | — | US | claimed |
| EP-1432853-A2 | PROCESS AND APPARATUS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM- CONTAINING NITRIDE | AMMONO Sp. z o.o. (PL) | 2004-06-30 | — | — | EP | claimed |
| US-20020189531-A1 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | AMMONO SP. Z O.O. (PL) | 2002-12-19 | — | — | US | claimed |
| WO-2002101120-A2 | PROCESS AND APPARATUS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE | AMMONO SP. ZO.O (PL) | 2002-12-19 | — | — | WO | claimed |
| US-20250027204-A1 | Spray Pyrolysis of Li-Salt Films | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2025-01-23 | — | — | US | disclosed |
| CN-117881427-A | Conjugates of saponins, oligonucleotides and GALNAC | 萨普雷米科技有限公司 | 2024-04-12 | — | — | CN | disclosed |
| WO-2023086105-A1 | SPRAY PYROLYSIS OF LITHIUM SALT FILMS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2023-05-19 | — | — | WO | disclosed |
| CN-109411581-B | Light emitting diode epitaxial wafer and manufacturing method thereof | 华灿光电（浙江）有限公司 | 2020-07-07 | — | — | CN | disclosed |
| CN-110828641-A | LED assembly and LED display device | 罗姆股份有限公司 | 2020-02-21 | — | — | CN | disclosed |
| CN-109848577-A | The laser processing of chip | 株式会社迪思科 | 2019-06-07 | — | — | CN | disclosed |
| CN-1461498-A | light emitting device using LED chip | MATSUSHITA ELECTRIC WORKS LTD (JP) | 2003-12-10 | — | — | CN | disclosed |
| CN-1444254-A | Nitride semiconductor, semiconductor device and method for manufacturing the same | SONY CORP (JP) | 2003-09-24 | — | — | CN | disclosed |
| CN-1437225-A | Dry itching process for gallium nitrid compound semiconductor, etc. | SHAMK INTERNAT INST CO LTD (JP) | 2003-08-20 | — | — | CN | disclosed |
| EP-1061083-A1 | Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN | Korea Research Institute of Chemical Technology (KR) | 2000-12-20 | — | — | EP | disclosed |
| US-5675028-A | Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films | BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) | 1997-10-07 | — | — | US | disclosed |
| US-5171734-A | COATING A SUBSTRATE IN A FLUIDIZED BED MAINTAINED AT A TEMPERATURE BELOW THE VAPORIZATION TEMPERATURE OF THE RESULTING COATING COMPOSITION | SRI INTERNATIONAL (US) | 1992-12-15 | — | — | US | disclosed |