Dimethylamine

Dimethylamine

SCHEMBL1003093

CNC.CNC.CNC.CNC.[SiH4]

nearest known ligand 0.38

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Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.38
ALDH1A1 P00352 1/20 0.38
CYP3A4 P08684 1/20 0.38
MAPT P10636 1/20 0.38
HPGD P15428 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Dimethylamine SCHEMBL28651792 1.00 KDM4E (0.38) KDM4EALDH1A1CYP3A4MAPTHPGD
Dimethylamine SCHEMBL11121485 1.00
Dimethylamine SCHEMBL27858418 0.91
Dimethylamine SCHEMBL14797794 0.91
Dimethylamine SCHEMBL1330452 0.89
Dimethylamine SCHEMBL13695986 0.89
Dimethylamine SCHEMBL392668 0.89
Dimethylamine SCHEMBL1030 0.89
Dimethylamine SCHEMBL11567323 0.80
Dimethylamine SCHEMBL733 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7091135-B2 Method of manufacturing semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2006-08-15 US claimed
US-20040235254-A1 Method of manufacturing semiconductor device MICROSOFT TECHNOLOGY LICENSING, LLC 2004-11-25 US claimed
CN-113195596-B Branched organosilicon compounds, methods of making branched organosilicon compounds, and compositions comprising branched organosilicon compounds 美国陶氏有机硅公司 2023-02-28 CN disclosed
CN-113330054-B Branched organosilicon compounds, methods of making, and copolymers formed therewith 美国陶氏有机硅公司 2023-02-21 CN disclosed
CN-113166423-B Branched organosilicon compounds, method for producing branched organosilicon compounds, and compositions containing branched organosilicon compounds 美国陶氏有机硅公司 2023-02-17 CN disclosed
CN-113348199-B Branched organosilicon compounds, methods of making branched organosilicon compounds, and copolymers formed therewith 美国陶氏有机硅公司 2023-02-17 CN disclosed
CN-115052932-A Composition, method for preparing copolymer and end use of copolymer 美国陶氏有机硅公司 2022-09-13 CN disclosed
CN-110177847-B Emulsions, compositions comprising emulsions, films formed therefrom, and related methods 美国陶氏有机硅公司 2022-04-19 CN disclosed
CN-113348199-A Branched organosilicon compounds, methods of making branched organosilicon compounds, and copolymers formed therewith 美国陶氏有机硅公司 2021-09-03 CN disclosed
CN-113348174-A Branched organosilicon compounds, methods of making the branched organosilicon compounds, and related compositions 美国陶氏有机硅公司 2021-09-03 CN disclosed
CN-113330054-A Branched organosilicon compounds, methods of making, and copolymers formed therewith 美国陶氏有机硅公司 2021-08-31 CN disclosed
CN-113330055-A Acrylate-functional branched organosilicon compounds, methods of making, and copolymers formed therewith 美国陶氏有机硅公司 2021-08-31 CN disclosed
CN-113195596-A Branched organosilicon compounds, method for producing branched organosilicon compounds, and compositions containing branched organosilicon compounds 美国陶氏有机硅公司 2021-07-30 CN disclosed
CN-113166423-A Branched organosilicon compounds, method for producing branched organosilicon compounds, and compositions containing branched organosilicon compounds 美国陶氏有机硅公司 2021-07-23 CN disclosed
US-7863125-B2 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device RENESAS ELECTRONICS CORPORATION (JP) 2011-01-04 US disclosed
US-20090263945-A1 MANUFACTURING METHOD OF CMOS TYPE SEMICONDUCTOR DEVICE, AND CMOS TYPE SEMICONDUCTOR DEVICE RENESAS TECHNOLOGY CORP., (JP) 2009-10-22 US disclosed
US-7569890-B2 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device RENESAS TECHNOLOGY CORP. (JP) 2009-08-04 US disclosed
US-20060273401-A1 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device RENESAS TECHNOLOGY CORP. (JP) 2006-12-07 US disclosed
US-7091135-B2 Method of manufacturing semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2006-08-15 US disclosed
US-20040235254-A1 Method of manufacturing semiconductor device MICROSOFT TECHNOLOGY LICENSING, LLC 2004-11-25 US disclosed