SCHEMBL10135152

SCHEMBL10135152

CCC(C)C(=O)OCC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
HTT P42858 1/20 0.36
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
MLYCD O95822 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18872176 1.00 HTT (0.36) HTTMEN1KMT2AMLYCD
SCHEMBL17853775 0.88
SCHEMBL9239071 0.83 HTT (0.35) HTT
SCHEMBL12939343 0.82 HTT (0.38) HTT
SCHEMBL12939341 0.82 HTT (0.38) HTT
SCHEMBL8308167 0.82 HTT (0.56) HTTMEN1KMT2A
SCHEMBL13325079 0.80 HTT (0.33) HTTMLYCD
SCHEMBL18674552 0.80 HTT (0.39) HTT
SCHEMBL13799260 0.79 HTT (0.35) HTT
SCHEMBL18476620 0.79 HTT (0.35) HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3127928-B1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2017-11-15 EP disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-9645493-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
EP-3032332-B1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2017-04-05 EP disclosed
US-20170037167-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
US-20080124653-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed
US-20080124652-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed
US-20080118863-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-22 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20080008961-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008959-A1 Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008960-A1 Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070219338-A1 Self-assembling polymer film material, self-assembled pattern, and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. 2007-09-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 HTT 2036/4885MEN1 531/4885KMT2A 72/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.