SCHEMBL10167865

SCHEMBL10167865

CCC(C)(C)C(=O)OC12CC3CC(OCOC)(CC(OCOC)(C3)C1)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25509818 0.94
SCHEMBL13563630 0.92 DPP8 (0.33)
SCHEMBL15043161 0.88
SCHEMBL10260328 0.87 EPHX2 (0.30)
SCHEMBL12309612 0.87
SCHEMBL10040426 0.85
SCHEMBL15396580 0.85 EPHX2 (0.31)
SCHEMBL15746160 0.83
SCHEMBL13829172 0.83
SCHEMBL9924518 0.82 DPP4 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230314938-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-05 US disclosed
US-20230314939-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-05 US disclosed
US-20230314941-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-05 US disclosed
US-20230314938-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-05 US disclosed
US-20230305395-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230305391-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230305395-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230305392-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230305392-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-11740555-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-08-29 US disclosed
US-20130078426-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130065183-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-14 US disclosed
US-20120321855-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120276485-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-20120264054-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-10-18 US disclosed
US-20120219913-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120052449-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-01 US disclosed
US-20120028196-A1 METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-02-02 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed