SCHEMBL10172895

SCHEMBL10172895

C[S+]1CCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2611774 0.84
SCHEMBL2958757 0.80
Hydrochloric Acid SCHEMBL11528842 0.80
SCHEMBL12932557 0.76
SCHEMBL11618748 0.74
SCHEMBL9496852 0.74
SCHEMBL11616941 0.71
SCHEMBL256774 0.56
Cyclohexane SCHEMBL12475590 0.45
Cyclooctane SCHEMBL8564806 0.45

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230145113-A1 ELECTROLYTIC SOLUTION, ELECTROCHEMICAL DEVICE, LITHIUM-ION SECONDARY BATTERY, MODULE AND COMPOUND DAIKIN INDUSTRIES, LTD. (JP) 2023-05-11 US disclosed
US-9874816-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2018-01-23 US disclosed
US-20170363961-A9 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-9703195-B2 Radiation-sensitive resin composition, resist pattern-forming method, polymer, and method for producing compound JSR CORPORATION (JP) 2017-07-11 US disclosed
US-20170115570-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2017-04-27 US disclosed
US-20170075219-A1 ONIUM SALT, PHOTOACID GENERATOR, PHOTOSENSITIVE RESIN COMPOSITION, AND METHOD FOR PRODUCING DEVICE TOYO GOSEI CO., LTD. (JP) 2017-03-16 US disclosed
US-9587065-B2 Composition for pattern formation, and pattern-forming method JSR CORPORATION (JP) 2017-03-07 US disclosed
US-20160202608-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-07-14 US disclosed
US-20160185999-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2016-06-30 US disclosed
US-20130183624-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-07-18 US disclosed
US-20130149644-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2013-06-13 US disclosed
US-20130095428-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-04-18 US disclosed
US-20130078579-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND JSR CORPORATION (JP) 2013-03-28 US disclosed
US-20130065186-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT JSR CORPORATION (JP) 2013-03-14 US disclosed
US-8367298-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-05 US disclosed
US-20120295198-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-11-22 US disclosed
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-28 US disclosed
US-20110143279-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2011-06-16 US disclosed
US-20110014568-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed