SCHEMBL10189287

SCHEMBL10189287

C=CC(=O)OC1C(F)(F)C2(F)C(F)(F)C(F)(F)C1(F)C2(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4645114 0.74 TSHR (0.32)
SCHEMBL10189213 0.68
SCHEMBL8454373 0.68
SCHEMBL10189211 0.65
SCHEMBL14510483 0.63
SCHEMBL278957 0.63
SCHEMBL30633433 0.62 TSHR (0.38)
Acrylic Acid Methyl Ester SCHEMBL29111592 0.60 HCAR2 (0.34)
SCHEMBL9473389 0.60 TSHR (0.41)
SCHEMBL4328621 0.60 TSHR (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8247161-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8247161-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20100143844-A1 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed
US-20100143844-A1 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed
US-20090061360-A1 MATERIAL FOR RESIST PROTECTIVE FILM FOR IMMERSION LITHOGRAPHY ASAHI GLASS COMPANY, LIMITED (JP) 2009-03-05 US disclosed