SCHEMBL10248340

SCHEMBL10248340

CC(F)(F)C(=O)NCC1CCCCC1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 4/20 0.56
OPRK1 P41145 2/20 0.49
HDAC6 Q9UBN7 6/20 0.49
MLYCD O95822 1/20 0.49
CA12 O43570 1/20 0.49
CA1 P00915 1/20 0.49
CA2 P00918 1/20 0.49
MMP1 P03956 1/20 0.49
MMP2 P08253 1/20 0.49
MMP3 P08254 1/20 0.49
MMP9 P14780 1/20 0.49
MMP8 P22894 1/20 0.49
CA9 Q16790 1/20 0.49
CYP2D6 P10635 1/20 0.47
HDAC4 P56524 3/20 0.46
HDAC3 O15379 2/20 0.46
HDAC1 Q13547 1/20 0.46
OPRD1 P41143 1/20 0.45
NPC1 O15118 1/20 0.43
RAB9A P51151 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1709299 0.86 EPHX1 (0.57) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL19652077 0.86 EPHX1 (0.57) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL3379859 0.85 HDAC6 (0.55) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL18624748 0.84 EPHX1 (0.53) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL3381027 0.82 HDAC6 (0.53) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL12073329 0.81 EPHX1 (0.52) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL13853093 0.80 CHRM3 (0.41) EPHX1KMT2A
SCHEMBL10248367 0.80 EPHX1 (0.37) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL18624725 0.80 EPHX1 (0.48) EPHX1OPRK1HDAC6MLYCDCA12
SCHEMBL17929909 0.80 EPHX1 (0.50) EPHX1OPRK1HDAC6MLYCDCA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8956802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-02-17 US disclosed
US-8859192-B2 Negative pattern forming method and resist pattern FUJIFILM CORPORATION (JP) 2014-10-14 US disclosed
WO-2014034533-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2014-03-06 WO disclosed
US-20130266777-A1 NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2013-10-10 US disclosed
US-20130202999-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-08-08 US disclosed
US-20120076996-A1 RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed