SCHEMBL104512

SCHEMBL104512

O=C[C]C=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL821860 0.62
SCHEMBL132811 0.62
SCHEMBL2112584 0.59
SCHEMBL20597277 0.59
SCHEMBL8109489 0.59
Propynal SCHEMBL9393 0.59
SCHEMBL18923 0.59
SCHEMBL1372732 0.59
SCHEMBL1195989 0.59
SCHEMBL5613933 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 279 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9227955-B2 Compound having angiogenesis inhibitory activity, method for preparing same, and pharmaceutical composition comprising same BORYUNG PHARMACEUTICAL CO., LTD. (KR) 2016-01-05 US claimed
US-8945810-B2 Positive resist composition and pattern-forming method FUJIFILM CORPORATION (JP) 2015-02-03 US claimed
US-20140256711-A1 Novel Compound Having Angiogenesis Inhibitory Activity, Method for Preparing Same, and Pharmaceutical Composition Comprising Same BORYUNG PHARMACEUTICAL CO., LTD. (KR) 2014-09-11 US claimed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US claimed
EP-1970760-A1 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM Corporation (JP) 2008-09-17 EP claimed
EP-0447891-B1 Thieno(2,3-d)pyrimidine derivatives BASF AG (DE) 1994-04-27 EP claimed
US-11584810-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin FUJIFILM CORPORATION (JP) 2023-02-21 US disclosed
CN-109643064-B Photosensitive or radiation-sensitive resin composition, film thereof, pattern forming method, electronic device manufacturing method, compound, and resin 富士胶片株式会社 2022-07-26 CN disclosed
EP-2550562-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-21 EP disclosed
EP-2539769-B1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORP (JP) 2021-04-07 EP disclosed
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 EP disclosed
US-10678132-B2 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM CORPORATION (JP) 2020-06-09 US disclosed
US-20190171104-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2019-06-06 US disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
EP-1970760-A1 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM Corporation (JP) 2008-09-17 EP disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
EP-1962139-A1 Negative resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-08-27 EP disclosed
WO-2008093856-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 WO disclosed
EP-0447891-B1 Thieno(2,3-d)pyrimidine derivatives BASF AG (DE) 1994-04-27 EP disclosed
EP-0447891-A1 Thieno(2,3-d)pyrimidine derivatives BASF Aktiengesellschaft (DE) 1991-09-25 EP disclosed