⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL27691141 | 1.00 | — | — | |
| Arsenic SCHEMBL29712464 | 1.00 | — | — | |
| Arsenic SCHEMBL7549108 | 0.82 | — | — | |
| Arsenic SCHEMBL29454376 | 0.82 | — | — | |
| SCHEMBL11789180 | 0.71 | — | — | |
| Arsenic SCHEMBL15912 | 0.71 | — | — | |
| SCHEMBL10903486 | 0.71 | — | — | |
| Arsenic SCHEMBL1650926 | 0.71 | — | — | |
| SCHEMBL176391 | 0.71 | — | — | |
| SCHEMBL5200948 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-4855246-A | Fabrication of a gaas short channel lightly doped drain mesfet | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1989-08-08 | — | — | US | claimed |
| EP-0175864-B1 | SELF-ALIGNED METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTOR | International Business Machines Corporation (US) | 1989-05-24 | — | — | EP | claimed |
| EP-0175864-A2 | Self-aligned metal-semiconductor field effect transistor | International Business Machines Corporation (US) | 1986-04-02 | — | — | EP | claimed |
| US-4855246-A | Fabrication of a gaas short channel lightly doped drain mesfet | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1989-08-08 | — | — | US | disclosed |
| EP-0175864-B1 | SELF-ALIGNED METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTOR | International Business Machines Corporation (US) | 1989-05-24 | — | — | EP | disclosed |
| US-4636822-A | GaAs short channel lightly doped drain MESFET structure and fabrication | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1987-01-13 | — | — | US | disclosed |
| EP-0175864-A2 | Self-aligned metal-semiconductor field effect transistor | International Business Machines Corporation (US) | 1986-04-02 | — | — | EP | disclosed |