⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| L-Alaninol SCHEMBL1331749 | 0.96 | — | — | |
| L-Alaninol SCHEMBL2804901 | 0.96 | TSHR (0.54) | — | |
| L-Alaninol SCHEMBL72189 | 0.96 | — | — | |
| L-Alaninol SCHEMBL30417235 | 0.96 | — | — | |
| L-Alaninol SCHEMBL82137 | 0.96 | — | — | |
| L-Alaninol SCHEMBL7787362 | 0.96 | TSHR (0.54) | — | |
| L-Alaninol SCHEMBL30499 | 0.96 | — | — | |
| L-Alaninol SCHEMBL3463781 | 0.92 | — | — | |
| L-Alaninol SCHEMBL8093475 | 0.92 | — | — | |
| L-Alaninol SCHEMBL22710985 | 0.92 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12557622-B2 | Method for fabricating a semiconductor device with a composite barrier structure | NANYA TECHNOLOGY CORPORATION (TW) | 2026-02-17 | — | — | US | claimed |
| US-12341054-B2 | Method for fabricating semiconductor device with chelating agent | NANYA TECHNOLOGY CORPORATION (TW) | 2025-06-24 | — | — | US | claimed |
| US-20230317514-A1 | SEMICONDUCTOR DEVICE WITH COMPOSITE BARRIER STRUCTURE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2023-10-05 | — | — | US | claimed |
| US-20230317508-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREATMENT | NANYA TECHNOLOGY CORPORATION (TW) | 2023-10-05 | — | — | US | claimed |
| US-12575404-B2 | Semiconductor device with protection layer and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2026-03-10 | — | — | US | disclosed |
| US-12557622-B2 | Method for fabricating a semiconductor device with a composite barrier structure | NANYA TECHNOLOGY CORPORATION (TW) | 2026-02-17 | — | — | US | disclosed |
| US-20260040912-A1 | SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| US-20260040913-A1 | SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| US-12489014-B2 | Method for fabricating semiconductor device with multi-carbon-concentration dielectrics | NANYA TECHNOLOGY CORPORATION (TW) | 2025-12-02 | — | — | US | disclosed |
| US-12341062-B2 | Method for fabricating semiconductor device with liner structure | NANYA TECHNOLOGY CORPORATION (TW) | 2025-06-24 | — | — | US | disclosed |
| US-12341054-B2 | Method for fabricating semiconductor device with chelating agent | NANYA TECHNOLOGY CORPORATION (TW) | 2025-06-24 | — | — | US | disclosed |
| US-12315808-B2 | Semiconductor device with liner structure | NANYA TECHNOLOGY CORPORATION (TW) | 2025-05-27 | — | — | US | disclosed |
| US-20060046944-A1 | Composition for removing a photoresist residue and polymer residue, and residue removal process using same | KANTO KAGAKU KABUSHIKI KAISHA (JP) | 2006-03-02 | — | — | US | disclosed |
| US-20060019201-A1 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device | KANTO KAGAKU KABUSHIKI KAISHA (JP) | 2006-01-26 | — | — | US | disclosed |
| EP-1612611-A2 | Composition for removing photoresist residue and polymer residue | Kanto Kagaku Kabushiki Kaisha (JP) | 2006-01-04 | — | — | EP | disclosed |
| CN-1716104-A | Composition for removing photoresist residue and polymer residue | KANTO KAGAKU (JP) | 2006-01-04 | — | — | CN | disclosed |
| US-20050288199-A1 | Composition for removing photoresist residue and polymer residue | KANTO KAGAKU KABUSHIKI KAISHA (JP) | 2005-12-29 | — | — | US | disclosed |
| EP-1602714-A1 | Post-dry etching cleaning liquid composition and process for fabricating semiconductor device | SONY CORPORATION (JP) | 2005-12-07 | — | — | EP | disclosed |
| US-6372410-B1 | FOR USE IN PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUITS; FOR REMOVING RESIST RESIDUES REMAINING AFTER ETCHING OR ASHING | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2002-04-16 | — | — | US | disclosed |
| EP-1091254-A2 | Resist stripping composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2001-04-11 | — | — | EP | disclosed |