SCHEMBL10587775

SCHEMBL10587775

CCOc1ccc([Si](O)(O)O)cc1

nearest known ligand 0.64

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
NQO1 P15559 1/20 0.64
TDP1 Q9NUW8 2/20 0.52
TSHR P16473 1/20 0.52
LTA4H P09960 2/20 0.52
PARP10 Q53GL7 1/20 0.48
PRSS1 P07477 1/20 0.48
PRSS2 P07478 1/20 0.48
PRSS3 P35030 1/20 0.48
KMT2A Q03164 2/20 0.47
NPSR1 Q6W5P4 1/20 0.47
ADRA2A P08913 2/20 0.47
MAPT P10636 1/20 0.47
NPC1 O15118 1/20 0.46
PLK1 P53350 1/20 0.46
POLB P06746 1/20 0.46
MEN1 O00255 1/20 0.46
LMNA P02545 1/20 0.46
CYP1A2 P05177 1/20 0.46
ALDH1A1 P00352 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10588253 0.88 NQO1 (0.67) NQO1TDP1TSHRLTA4HPARP10
1,4-Diethoxybenzene SCHEMBL124015 0.80 NQO1 (1.00) NQO1TDP1TSHRLTA4HPARP10
1,4-Diethoxybenzene SCHEMBL28186701 0.80 NQO1 (1.00) NQO1TDP1TSHRLTA4HPARP10
SCHEMBL6277365 0.79 NQO1 (0.67) NQO1TDP1TSHRLTA4HPARP10
SCHEMBL19755181 0.78 FYN (0.38) NQO1TDP1TSHRLTA4HMAPT
SCHEMBL3701221 0.77 NQO1 (0.64) NQO1TDP1TSHRLTA4HPARP10
1,4-Diethoxybenzene SCHEMBL11794798 0.77 NQO1 (0.93) NQO1TDP1TSHRLTA4HPARP10
SCHEMBL10341723 0.77 NQO1 (0.56) NQO1TDP1TSHRLTA4HPARP10
SCHEMBL9668699 0.76 NQO1 (0.61) NQO1TDP1TSHRLTA4HPARP10
SCHEMBL9292576 0.76 NQO1 (0.61) NQO1TDP1TSHRLTA4HPARP10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-20170371242-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM REMOVABLE BY WET PROCESS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-12-28 US disclosed
EP-0324671-A2 Alkoxy-type derivatives of trivalent metals of group 3b, and their preparation RHONE-POULENC CHIMIE (FR) 1989-07-19 EP disclosed