SCHEMBL106252

SCHEMBL106252

O=[Zn].[Hf].[InH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28141197 0.91
SCHEMBL28492631 0.91
SCHEMBL27969802 0.89
SCHEMBL557848 0.89
SCHEMBL19897484 0.89
SCHEMBL26092210 0.89
SCHEMBL24565 0.89
SCHEMBL25273109 0.80
SCHEMBL21680904 0.80
SCHEMBL3396131 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2357 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
CN-122069712-A Semiconductor device and method for manufacturing the same 三星电子株式会社 2026-05-19 CN claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-12593474-B2 Semiconductor device including channel structure comprising different compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-31 US claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20260025973-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20260025968-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20250351338-A1 SEMICONDUCTOR DEVICES SAMSUNG ELECTRONICS CO LTD (KR) 2025-11-13 US claimed
US-20120126223-A1 TRANSISTORS, METHODS OF MANUFACTURING THE SAME AND ELECTRONIC DEVICES INCLUDING TRANSISTORS SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-05-24 US claimed
US-20120085998-A1 TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE SAME SNU R&DB FOUNDATION (KR) 2012-04-12 US claimed
US-8035110-B2 Thin-film transistor substrate having oxide active layer patterns and method of fabricating the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-10-11 US claimed
EP-2369627-A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-28 EP claimed
US-20110227064-A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-22 US claimed
US-20110163310-A1 Thin-film transistor having etch stop multi-layer and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. 2011-07-07 US claimed
EP-2330629-A1 Transistor, method of manufacturing the transistor and electronic device including the transistor SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-08 EP claimed
US-20110127518-A1 Transistor, method of manufacturing the transistor and electronic device including the transistor SAMSUNG ELECTRONICS CO., LTD. 2011-06-02 US claimed
US-20100200849-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG DISPLAY CO., LTD. (KR) 2010-08-12 US claimed
US-20100148169-A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-06-17 US claimed