⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3124779 | 0.91 | — | — | |
| SCHEMBL28200398 | 0.89 | — | — | |
| SCHEMBL31373850 | 0.89 | — | — | |
| SCHEMBL50288 | 0.89 | — | — | |
| SCHEMBL136556 | 0.89 | — | — | |
| SCHEMBL3613828 | 0.89 | — | — | |
| SCHEMBL23151878 | 0.80 | — | — | |
| SCHEMBL17967718 | 0.80 | — | — | |
| SCHEMBL17423991 | 0.80 | — | — | |
| SCHEMBL4849612 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1158 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260143674-A1 | SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2026-05-21 | — | — | US | claimed |
| EP-4730944-A1 | SEMICONDUCTOR DEVICE | Samsung Electronics Co., Ltd. (KR) | 2026-04-22 | — | — | EP | claimed |
| US-20260107441-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-16 | — | — | US | claimed |
| EP-4718973-A1 | MEMORY DEVICE AND DRIVING METHOD THEREOF | Samsung Electronics Co., Ltd. (KR) | 2026-04-01 | — | — | EP | claimed |
| US-20260089949-A1 | MEMORY DEVICE AND DRIVING METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-03-26 | — | — | US | claimed |
| US-20260025973-A1 | MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS | MICRON TECHNOLOGY INC (US) | 2026-01-22 | — | — | US | claimed |
| US-20260025968-A1 | MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS | MICRON TECHNOLOGY INC (US) | 2026-01-22 | — | — | US | claimed |
| US-20250351338-A1 | SEMICONDUCTOR DEVICES | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-11-13 | — | — | US | claimed |
| US-12471321-B2 | Oxide thin film transistor including photocatalyst layer and method for manufacturing the same | UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY (KR) | 2025-11-11 | — | — | US | claimed |
| US-20250342865-A1 | MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL | MICRON TECHNOLOGY INC (US) | 2025-11-06 | — | — | US | claimed |
| US-9219099-B1 | Memory structure and preparation method thereof | NATIONAL CHIAO TUNG UNIVERSITY (TW) | 2015-12-22 | — | — | US | claimed |
| US-20150318383-A1 | AMORPHOUS OXIDE THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL | BOE TECHNOLOGY GROUP CO LTD (CN) | 2015-11-05 | — | — | US | claimed |
| US-9112040-B2 | Amorphous oxide thin film transistor, method for manufacturing the same, and display panel | BOE TECHNOLOGY GROUP CO., LTD. (CN) | 2015-08-18 | — | — | US | claimed |
| CN-104716198-A | Thin film transistor and manufacturing method thereof as well as display device | BOE TECHNOLOGY GROUP CO LTD | 2015-06-17 | — | — | CN | claimed |
| US-20150091004-A1 | METAL WIRE, THIN-FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE | TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) | 2015-04-02 | — | — | US | claimed |
| CN-104272462-A | Method for manufacturing oxide semiconductor thin film transistor, and active operating display device and active operating sensor device using same | UNIV KYUNG HEE UNIV IND COOP GROUP | 2015-01-07 | — | — | CN | claimed |
| US-20140327001-A1 | METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND ACTIVE OPERATING DISPLAY DEVICE AND ACTIVE OPERATING SENSOR DEVICE USING SAME | UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (KR) | 2014-11-06 | — | — | US | claimed |
| US-8673727-B1 | Flexible non-volatile memory | NATIONAL CHIAO TUNG UNIVERSITY (TW) | 2014-03-18 | — | — | US | claimed |
| US-20140061569-A1 | FLEXIBLE NON-VOLATILE MEMORY | NATIONAL CHIAO TUNG UNIVERSITY (TW) | 2014-03-06 | — | — | US | claimed |
| US-20120248446-A1 | AMORPHOUS OXIDE THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL | BOE TECHNOLOGY GROUP CO., LTD. (CN) | 2012-10-04 | — | — | US | claimed |