⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12930528 | 0.88 | — | — | |
| SCHEMBL21735251 | 0.84 | — | — | |
| SCHEMBL22624917 | 0.84 | — | — | |
| SCHEMBL709033 | 0.83 | — | — | |
| SCHEMBL1271146 | 0.83 | — | — | |
| SCHEMBL22623373 | 0.82 | — | — | |
| SCHEMBL37587 | 0.79 | MEN1 (0.33) | — | |
| SCHEMBL554739 | 0.79 | MEN1 (0.33) | — | |
| SCHEMBL15186 | 0.79 | MEN1 (0.33) | — | |
| SCHEMBL10379724 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9551935-B2 | Pattern forming method and resist composition | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20160313645-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-10-27 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9152048-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-10-06 | — | — | US | disclosed |
| US-9116437-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9023579-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9012123-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-04-21 | — | — | US | disclosed |
| US-8975002-B2 | Positive resist composition for immersion exposure and pattern forming method | FUJIFILM CORPORATION (JP) | 2015-03-10 | — | — | US | disclosed |
| US-8932794-B2 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8900789-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2014-12-02 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110223536-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-15 | — | — | US | disclosed |
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110143280-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20110136062-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-06-09 | — | — | US | disclosed |
| US-20110091809-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-02-03 | — | — | US | disclosed |
| US-20110014571-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100015554-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-01-21 | — | — | US | disclosed |
| EP-1767989-A1 | METHOD OF FORMING GRAFT PATTERN, GRAFT PATTERN MATERIAL, METHOD OF LITHOGRAPHY, METHOD OF FORMING CONDUCTIVE PATTERN, CONDUCTIVE PATTERN, PROCESS FOR PRODUCING COLOR FILTER, COLOR FILTER AND PROCESS FOR PRODUCING MICROLENS | FUJIFILM CORPORATION (JP) | 2007-03-28 | — | — | EP | disclosed |