SCHEMBL1065444

SCHEMBL1065444

C=C[Si](OC(C)(C)C)(C(C)CC)C(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1065649 0.79
SCHEMBL1066811 0.79
SCHEMBL15915571 0.78
SCHEMBL1066950 0.78
SCHEMBL1065420 0.76
SCHEMBL1066813 0.74
SCHEMBL1317682 0.74
SCHEMBL427352 0.70
SCHEMBL2954301 0.70
SCHEMBL426215 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1566835-B1 INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE TOSOH CORP (JP) 2012-08-01 EP claimed
US-20060151884-A1 Insulatng film material containing organic silane or organic siloxane compound, method for produing sane, and semiconductor device TOSOH CORPORATION (JP) 2006-07-13 US claimed
CN-102947393-B Typical metal containing polysiloxane composition, process for production of same, and uses thereof TOSOH CORP 2015-03-11 CN disclosed
EP-2278612-B1 Material composed of organosilane or organosiloxane compound for insulating film, its production method and semiconductor device TOSOH CORP (JP) 2014-12-10 EP disclosed
CN-102947393-A Typical metal containing polysiloxane composition, process for production of same, and uses thereof TOSOH CORP 2013-02-27 CN disclosed
EP-1566835-B1 INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE TOSOH CORP (JP) 2012-08-01 EP disclosed
US-7935425-B2 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device TOSOH CORPORATION (JP) 2011-05-03 US disclosed
EP-2278612-A2 Material composed of organosilane or organosiloxane compound for insulating film, its production method and semiconductor device Tosoh Corporation (JP) 2011-01-26 EP disclosed
US-20060151884-A1 Insulatng film material containing organic silane or organic siloxane compound, method for produing sane, and semiconductor device TOSOH CORPORATION (JP) 2006-07-13 US disclosed
EP-1566835-A1 INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE Tosoh Corporation (JP) 2005-08-24 EP disclosed