⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2229158 | 1.00 | — | — | |
| SCHEMBL14917421 | 0.87 | — | — | |
| SCHEMBL3944369 | 0.87 | — | — | |
| SCHEMBL15467190 | 0.87 | — | — | |
| SCHEMBL2195837 | 0.87 | — | — | |
| SCHEMBL2974614 | 0.87 | — | — | |
| SCHEMBL21328559 | 0.87 | — | — | |
| SCHEMBL21328566 | 0.87 | — | — | |
| SCHEMBL21328558 | 0.87 | — | — | |
| SCHEMBL15466856 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2370 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122073955-A | Double fixed layer magnetic tunnel junction, magnetic memory chip, and method of manufacturing the same | 北京理工大学长三角研究院(嘉兴) | 2026-05-22 | — | — | CN | claimed |
| US-12532667-B2 | Magnetic storage structure, magnetic storage array structure and control method thereof, and memory | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2026-01-20 | — | — | US | claimed |
| US-12510609-B2 | Magnetoresistance element including a multi-layered free layer stack to tune hysteresis and output amplitude | ALLEGRO MICROSYSTEMS, LLC (US) | 2025-12-30 | — | — | US | claimed |
| US-12474418-B2 | Nanodevice, method of making the same, and method of using the same | PURDUE RESEARCH FOUNDATION (US) | 2025-11-18 | — | — | US | claimed |
| US-20250342874-A1 | CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | claimed |
| EP-3872879-B1 | MAGNETO-RESISTIVE RANDOM STORAGE UNIT | HUAWEI TECH CO LTD (CN) | 2025-08-27 | — | — | EP | claimed |
| US-20250258252-A1 | MAGNETORESISTANCE ELEMENT INCLUDING A MULTI-LAYERED FREE LAYER STACK TO TUNE HYSTERESIS AND OUTPUT AMPLITUDE | ALLEGRO MICROSYSTEMS, LLC (US) | 2025-08-14 | — | — | US | claimed |
| EP-4426090-B1 | A STACK WITH A HIGH TUNNELING MAGNETORESISTANCE RATIO FOR A MAGNETIC RANDOM ACCESS MEMORY DEVICE | IMEC VZW (BE) | 2025-08-06 | — | — | EP | claimed |
| US-20250232959-A1 | DEPOSITION TOOL WITH DIELECTRIC COATED CHAMBER SIDEWALLS TO IMPROVE ELECTROMANGNETIC FIELD UNIFORMITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-17 | — | — | US | claimed |
| US-12347595-B2 | Magnetoresistance element including a skyrmion layer and a vortex layer that are magnetically coupled to each other | ALLEGRO MICROSYSTEMS, LLC (US) | 2025-07-01 | — | — | US | claimed |
| WO-2008100871-A2 | NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER | YADAV TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | claimed |
| US-20080191295-A1 | Non-Volatile Magnetic Memory Element with Graded Layer | YADAV TECHNOLOGY (US) | 2008-08-14 | — | — | US | claimed |
| US-20080032159-A1 | METHOD AND APPARATUS FOR PROVIDING A MAGNETIC READ SENSOR HAVING A THIN PINNING LAYER AND IMPROVED MAGNETOREISTIVE COEFFICIENT | HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. (NL) | 2008-02-07 | — | — | US | claimed |
| US-20070297222-A1 | MRAM cell using multiple axes magnetization and method of operation | INFINEON TECHNOLOGIES AG (DE) | 2007-12-27 | — | — | US | claimed |
| US-20070278547-A1 | MRAM synthetic anitferomagnet structure | FREESCALE SEMICONDUCTOR, INC. | 2007-12-06 | — | — | US | claimed |
| US-20070278602-A1 | MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture | INFINEON TECHNOLOGIES AG (DE) | 2007-12-06 | — | — | US | claimed |
| US-20070176251-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-02 | — | — | US | claimed |
| US-6381106-B1 | Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-04-30 | — | — | US | claimed |
| US-6353518-B2 | Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-03-05 | — | — | US | claimed |
| US-6317299-B1 | Seed layer for improving pinning field spin valve sensor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-11-13 | — | — | US | claimed |