⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2229159 | 1.00 | — | — | |
| SCHEMBL30050724 | 1.00 | — | — | |
| SCHEMBL30300619 | 1.00 | — | — | |
| SCHEMBL29500945 | 0.87 | — | — | |
| SCHEMBL31158229 | 0.87 | — | — | |
| SCHEMBL29598383 | 0.87 | — | — | |
| SCHEMBL2883486 | 0.87 | — | — | |
| SCHEMBL3944366 | 0.87 | — | — | |
| SCHEMBL31106336 | 0.87 | — | — | |
| SCHEMBL30634934 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3781 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122073955-A | Double fixed layer magnetic tunnel junction, magnetic memory chip, and method of manufacturing the same | 北京理工大学长三角研究院(嘉兴) | 2026-05-22 | — | — | CN | claimed |
| WO-2026097614-A1 | NANO-OSCILLATOR ARRAY AND MANUFACTURING METHOD THEREFOR, OSCILLATOR NETWORK AND COMPUTING DEVICE | 中国科学院微电子研究所 | 2026-05-15 | — | — | WO | claimed |
| US-20260136561-A1 | MAGNETIC MEMORY STRUCTURE | POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION (TW) | 2026-05-14 | — | — | US | claimed |
| EP-4740716-A1 | FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY | International Business Machines Corporation (US) | 2026-05-13 | — | — | EP | claimed |
| CN-116609953-B | Graphical wave front regulating and controlling method of terahertz spin emitter | 北京航空航天大学 | 2026-05-12 | — | — | CN | claimed |
| US-12614702-B2 | Substrate processing apparatus and a method of processing a substrate using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-28 | — | — | US | claimed |
| US-12597436-B2 | Pre-assisting microwave-assisted magnetic recording with spin-torque nano-oscillators | HEADWAY TECHNOLOGIES, INC. (US) | 2026-04-07 | — | — | US | claimed |
| US-12578177-B2 | Low-magnetic-field magnetoresistive angle sensor | MultiDimension Technology Co., Ltd. (CN) | 2026-03-17 | — | — | US | claimed |
| US-12575332-B2 | CoFeB based magnetic tunnel junction device with boron encapsulation layer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2026-03-10 | — | — | US | claimed |
| US-20260068546-A1 | MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE | APPLIED MATERIALS, INC. (US) | 2026-03-05 | — | — | US | claimed |
| WO-2008100871-A2 | NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER | YADAV TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | claimed |
| US-20080191295-A1 | Non-Volatile Magnetic Memory Element with Graded Layer | YADAV TECHNOLOGY (US) | 2008-08-14 | — | — | US | claimed |
| US-20080032159-A1 | METHOD AND APPARATUS FOR PROVIDING A MAGNETIC READ SENSOR HAVING A THIN PINNING LAYER AND IMPROVED MAGNETOREISTIVE COEFFICIENT | HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. (NL) | 2008-02-07 | — | — | US | claimed |
| US-20070297222-A1 | MRAM cell using multiple axes magnetization and method of operation | INFINEON TECHNOLOGIES AG (DE) | 2007-12-27 | — | — | US | claimed |
| US-20070278547-A1 | MRAM synthetic anitferomagnet structure | FREESCALE SEMICONDUCTOR, INC. | 2007-12-06 | — | — | US | claimed |
| US-20070278602-A1 | MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture | INFINEON TECHNOLOGIES AG (DE) | 2007-12-06 | — | — | US | claimed |
| US-20070176251-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-02 | — | — | US | claimed |
| US-6381106-B1 | Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-04-30 | — | — | US | claimed |
| US-6353518-B2 | Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-03-05 | — | — | US | claimed |
| US-6317299-B1 | Seed layer for improving pinning field spin valve sensor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-11-13 | — | — | US | claimed |