⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1064199 | 0.81 | — | — | |
| SCHEMBL2471457 | 0.78 | — | — | |
| SCHEMBL5409886 | 0.71 | — | — | |
| SCHEMBL1066783 | 0.70 | — | — | |
| SCHEMBL63318 | 0.70 | — | — | |
| SCHEMBL23292819 | 0.69 | — | — | |
| SCHEMBL21066922 | 0.69 | — | — | |
| SCHEMBL21066921 | 0.69 | — | — | |
| SCHEMBL9342123 | 0.69 | — | — | |
| SCHEMBL9615947 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1566835-B1 | INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE | TOSOH CORP (JP) | 2012-08-01 | — | — | EP | claimed |
| US-7935425-B2 | Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device | TOSOH CORPORATION (JP) | 2011-05-03 | — | — | US | claimed |
| US-20060151884-A1 | Insulatng film material containing organic silane or organic siloxane compound, method for produing sane, and semiconductor device | TOSOH CORPORATION (JP) | 2006-07-13 | — | — | US | claimed |
| EP-1566835-A1 | INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE | Tosoh Corporation (JP) | 2005-08-24 | — | — | EP | claimed |
| EP-2584005-B1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF | TOSOH CORP (JP) | 2018-02-21 | — | — | EP | disclosed |
| EP-2278612-B1 | Material composed of organosilane or organosiloxane compound for insulating film, its production method and semiconductor device | TOSOH CORP (JP) | 2014-12-10 | — | — | EP | disclosed |
| US-8907038-B2 | Typical metal containing polysiloxane composition, process for its production, and its uses | TOSOH CORPORATION (JP) | 2014-12-09 | — | — | US | disclosed |
| EP-2584005-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF | Tosoh Corporation (JP) | 2013-04-24 | — | — | EP | disclosed |
| US-20130090447-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES | TOSOH CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| EP-1566835-B1 | INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE | TOSOH CORP (JP) | 2012-08-01 | — | — | EP | disclosed |
| US-7935425-B2 | Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device | TOSOH CORPORATION (JP) | 2011-05-03 | — | — | US | disclosed |
| EP-2278612-A2 | Material composed of organosilane or organosiloxane compound for insulating film, its production method and semiconductor device | Tosoh Corporation (JP) | 2011-01-26 | — | — | EP | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20060151884-A1 | Insulatng film material containing organic silane or organic siloxane compound, method for produing sane, and semiconductor device | TOSOH CORPORATION (JP) | 2006-07-13 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| EP-1566835-A1 | INSULATING FILM MATERIAL CONTAINING ORGANIC SILANE OR ORGANIC SILOXANE COMPOUND, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE | Tosoh Corporation (JP) | 2005-08-24 | — | — | EP | disclosed |
| US-5594079-A | COORDINATION CATALYST CONTAINING BORON, STEREOREGULAR POLYPROPYLENE | TOSOH CORPORATION (JP) | 1997-01-14 | — | — | US | disclosed |
| US-5489634-A | EFFICIENT SELECTIVE CATALYTIC POLYMERIZATION OF ALPHA-OLEFINS YIELDS HIGH MOLECULAR WEIGHT SPHERICAL PARTICLES HAVING HIGH BULK DENSITY, CONTROLLED PARTICLE SIZE AND MOLECULAR WEIGHT DISTRIBUTION | TOSOH CORPORATION (JP) | 1996-02-06 | — | — | US | disclosed |
| EP-0582278-A2 | Method for producing a polyolefin | TOSOH CORPORATION (JP) | 1994-02-09 | — | — | EP | disclosed |
| EP-0530814-A1 | Method for producing a stereospecific polyolefin | TOSOH CORPORATION (JP) | 1993-03-10 | — | — | EP | disclosed |