SCHEMBL106986

SCHEMBL106986

CC(C)O[Si](C)(C)OC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13653238 0.85
SCHEMBL12726078 0.82
SCHEMBL10333761 0.82
SCHEMBL5460446 0.79
SCHEMBL26676578 0.79
SCHEMBL5462786 0.79
SCHEMBL13653236 0.77
SCHEMBL93160 0.75
SCHEMBL276184 0.75
SCHEMBL1108445 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1320 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240052490-A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM VERSUM MATERIALS US, LLC (US) 2024-02-15 US claimed
EP-4018015-A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM Versum Materials US, LLC (US) 2022-06-29 EP claimed
CN-114556527-A Monoalkoxysilanes and dialkoxysilanes and dense organosilica films prepared therefrom 弗萨姆材料美国有限责任公司 2022-05-27 CN claimed
CN-109952351-B Antifouling coating composition and coated article having antifouling coating film formed on surface thereof 日东化成株式会社 2021-07-30 CN claimed
US-10991571-B2 High temperature atomic layer deposition of silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2021-04-27 US claimed
WO-2021050798-A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM VERSUM MATERIALS US, LLC (US) 2021-03-18 WO claimed
US-20190189431-A1 High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films VERSUM MATERIALS US, LLC (US) 2019-06-20 US claimed
EP-2876099-B1 Norbornadiene purification method AIR LIQUIDE (FR) 2017-11-15 EP claimed
US-20170256399-A9 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-09-07 US claimed
CN-103374708-B High temperature atomic layer deposition of silicon oxide thin films 气体产品与化学公司 2017-05-17 CN claimed
EP-1561841-A2 Cleaning CVD Chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-08-10 EP claimed
CN-1651159-A Cleaning CVD chambers following deposition of porogen-containing materials AIR PROD & CHEM (US) 2005-08-10 CN claimed
US-20050161060-A1 Cleaning CVD chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. 2005-07-28 US claimed
US-6846515-B2 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-01-25 US claimed
US-20040197474-A1 Method for enhancing deposition rate of chemical vapor deposition films VERSUM MATERIALS US, LLC 2004-10-07 US claimed
EP-1464726-A2 CVD method for forming a porous low dielectric constant SiOCH film AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-10-06 EP claimed
US-20030232137-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-12-18 US claimed
US-20030198742-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-10-23 US claimed
EP-1354980-A1 Method for forming a porous SiOCH layer. AIR PRODUCTS AND CHEMICALS, INC. (US) 2003-10-22 EP claimed
US-6040101-A Carrier particles for use in electrostatic image development and electrostatic image developer NIPPON SHOKUBAI CO., LTD. (JP) 2000-03-21 US claimed