Tetrapropylammonium

Tetrapropylammonium

SCHEMBL108100

CC(C)(C(=O)[O-])C(=O)O.CCC[N+](CCC)(CCC)CCC

nearest known ligand 0.42

Full drug profile on Sugi Atlas →

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 1/20 0.42
CA2 P00918 2/20 0.34
CA1 P00915 2/20 0.32
CYP3A4 P08684 2/20 0.32
TSHR P16473 2/20 0.32
NFKB1 P19838 2/20 0.32
NPSR1 Q6W5P4 2/20 0.32
BBOX1 O75936 2/20 0.32
FFAR3 O14843 2/20 0.31
HDAC3 O15379 2/20 0.31
HDAC1 Q13547 2/20 0.31
HDAC2 Q92769 2/20 0.31
HDAC8 Q9BY41 2/20 0.31
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrapropylammonium SCHEMBL108098 0.89 SLC22A1 (0.48) SLC22A1CA2CA1CYP3A4TSHR
Tetrabuthylammonium SCHEMBL107485 0.88 SLC22A1 (0.46) SLC22A1CA2CA1CYP3A4TSHR
Tetrapropylammonium SCHEMBL108099 0.87 SLC22A1 (0.50) SLC22A1TSHR
Tetrapropylammonium SCHEMBL2353669 0.82 SLC22A1 (0.50) SLC22A1CA2BBOX1FFAR3HDAC3
Tetrapropylammonium SCHEMBL2353672 0.80 SLC22A1 (0.53) SLC22A1TSHRFFAR3HDAC3HDAC1
Tetrapropylammonium SCHEMBL108600 0.79 SLC22A1 (0.59) SLC22A1BBOX1FFAR3HDAC3HDAC1
Tetrapropylammonium SCHEMBL103948 0.78 SLC22A1 (0.40) SLC22A1BBOX1FFAR3HDAC3HDAC1
Tetramethylammonium Ion SCHEMBL108346 0.77 TSHR (0.38) CA1TSHRBBOX1
Tetrabuthylammonium SCHEMBL105664 0.77 SLC22A1 (0.52) SLC22A1CA2CA1CYP3A4TSHR
Lithium Ion SCHEMBL108855 0.77 TSHR (0.42) CA1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2426558-B1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2018-10-24 EP disclosed
EP-2500775-B1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
US-8951711-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20140342289-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8852844-B2 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 US disclosed
US-8835102-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
EP-2172807-B1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-18 EP disclosed
EP-2172808-B1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-04 EP disclosed
US-8652750-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8652267-B2 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
EP-1845132-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed