SCHEMBL1081308

SCHEMBL1081308

N[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1931150 0.72
SCHEMBL555115 0.67
SCHEMBL203872 0.61
SCHEMBL6054660 0.61
SCHEMBL6950295 0.58
SCHEMBL23749599 0.55
SCHEMBL8354132 0.55
SCHEMBL17701120 0.50
SCHEMBL15048853 0.50
SCHEMBL11554337 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 185 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12322592-B2 Deposition of silicon-based dielectric films APPLIED MATERIALS, INC. (US) 2025-06-03 US claimed
EP-4292122-A1 DEPOSITION OF SILICON-BASED DIELECTRIC FILMS Applied Materials, Inc. (US) 2023-12-20 EP claimed
CN-116964714-A Deposition of silicon-based dielectric films 应用材料公司 2023-10-27 CN claimed
CN-110105383-B Hydrocarbyloxydisilanes 美国陶氏有机硅公司 2023-04-25 CN claimed
CN-115928058-A Vanadate modified silicon-zirconium composite passive film and preparation method thereof 安徽工业大学 2023-04-07 CN claimed
CN-110036138-B Thio (di) silanes 美国陶氏有机硅公司 2023-01-10 CN claimed
US-20220270870-A1 DEPOSITION OF SILICON-BASED DIELECTRIC FILMS APPLIED MATERIALS, INC. (US) 2022-08-25 US claimed
WO-2022174017-A1 DEPOSITION OF SILICON-BASED DIELECTRIC FILMS APPLIED MATERIALS, INC. (US) 2022-08-18 WO claimed
CN-112409256-A 5, 7-dichlorotetrahydroisoquinoline acetal amine compound, and preparation method and application thereof 山东福长药业有限公司 2021-02-26 CN claimed
CN-111793404-A Graphene water-based anticorrosive paint and use method thereof 郑州格莱菲高铁新材料科技有限公司 2020-10-20 CN claimed
CN-103031530-A Thin film forming method and film forming apparatus TOKYO ELECTRON LTD 2013-04-10 CN claimed
CN-102137823-A Composition for reinforcing hollow glass and protecting same from scratching, corresponding treatment methods and resulting treated hollow glass SAINT GOBAIN EMBALLAGE 2011-07-27 CN claimed
CN-100373559-C CVD method and device for forming silicon-containing insulation film TOKYO ELECTRON LTD (JP) 2008-03-05 CN claimed
CN-100344790-C Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition technology AIR LIQUIDE (FR) 2007-10-24 CN claimed
US-20060286819-A1 Method for silicon based dielectric deposition and clean with photoexcitation APPLIED MATERIALS, INC. 2006-12-21 US claimed
US-20050255714-A1 Method for silicon nitride chemical vapor deposition APPLIED MATERIALS, INC. 2005-11-17 US claimed
CN-1692480-A CVD method and apparatus for forming silicon-containing insulating film TOKYO ELECTRON LTD (JP) 2005-11-02 CN claimed
CN-1596324-A Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition techniques AIR LIQUIDE (FR) 2005-03-16 CN claimed
EP-0232971-A2 Clear, weather resistant adherent coating MORTON INTERNATIONAL, INC. (US) 1987-08-19 EP claimed
US-4640868-A CURABLE REACTION PRODUCT OF ISOCYANURATE POLYISOCYANATE AND AMINO DISILANE MORTON THIOKOL INC. (US) 1987-02-03 US claimed