Known targets — ChEMBL curated mechanism
ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG
The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL87401 | 0.96 | — | — | |
| SCHEMBL4793025 | 0.96 | — | — | |
| Hydrochloric Acid SCHEMBL10803450 | 0.92 | — | — | |
| Water SCHEMBL27619420 | 0.92 | — | — | |
| SCHEMBL918780 | 0.69 | — | — | |
| SCHEMBL918782 | 0.69 | — | — | |
| SCHEMBL1136739 | 0.69 | — | — | |
| SCHEMBL8586070 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL587863 | 0.65 | — | — | |
| Hydrochloric Acid SCHEMBL8950368 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4386053-A2 | SILOXANE POLYMER COMPOSITION, CURED PRODUCT, ELECTRONIC COMPONENT, OPTICAL COMPONENT, AND COMPOSITE MEMBER | JNC Corporation (JP) | 2024-06-19 | — | — | EP | disclosed |
| US-20240168381-A1 | PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-05-23 | — | — | US | disclosed |
| US-20230203222-A1 | POLYMERIZABLE COMPOSITION, INK, CURED SUBSTANCE, ELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING ELECTRODE MEMBER | JNC CORPORATION (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230151159-A1 | COMPOUND FOR FORMING HARDMASK, HARDMASK COMPOSITION INCLUDING THE COMPOUND, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-05-18 | — | — | US | disclosed |
| US-20230130998-A1 | PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-27 | — | — | US | disclosed |
| US-20230120542-A1 | PHOTO-DECOMPOSABLE COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-04-20 | — | — | US | disclosed |
| WO-2021256512-A1 | POLYMERIZABLE COMPOSITION, INK, TRANSFER MATRIX, AND METHOD FOR MANUFACTURING ELECTRODE MEMBER | JNC株式会社 | 2021-12-23 | — | — | WO | disclosed |
| US-20210240078-A1 | PHOTO-DECOMPOSABLE COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-08-05 | — | — | US | disclosed |
| US-10983434-B2 | Photoresist composition for deep ultraviolet light patterning method and method of manufacturing semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-04-20 | — | — | US | disclosed |
| US-20190101826-A1 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LIGHT PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-04-04 | — | — | US | disclosed |
| US-20090305011-A1 | Ink Jet Ink | EVONIK DEGUSSA GMBH (DE) | 2009-12-10 | — | — | US | disclosed |
| US-7595353-B2 | Fluorine-containing photocurable polymer composition | CHISSO CORPORATION (JP) | 2009-09-29 | — | — | US | disclosed |
| US-20080233515-A1 | RADIATION SENSITIVE RESIN COMPOSITION FOR FORMING A PROTECTIVE FILM, METHOD OF FORMING A PROTECTIVE FILM FROM THE COMPOSITION, LIQUID CRYSTAL DISPLAY DEVICE AND SOLID-STATE IMAGE SENSING DEVICE | JSR CORPORATION (JP) | 2008-09-25 | — | — | US | disclosed |
| EP-1972673-A1 | Radiation sensitive resin composition for forming a protective film, method of forming a protective film from the composition, liquid crystal display device and solid-state image sensing device | JSR Corporation (JP) | 2008-09-24 | — | — | EP | disclosed |
| US-20080207807-A1 | POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION | CHISSO CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20070082968-A1 | Fluorine-containing photocurable polymer composition | CHISSO CORPORATION | 2007-04-12 | — | — | US | disclosed |
| US-6756165-B2 | ALKALI SOLUBLE RESIN, UNSATURATED POLYMERIZABLE COMPOUND, RADIATION SENSITIVE POLYMERIZATION INITIATOR | JSR CORPORATION (JP) | 2004-06-29 | — | — | US | disclosed |
| US-20020055051-A1 | External additive for electrostatically charged image developing toner | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-05-09 | — | — | US | disclosed |
| US-20010044075-A1 | Radiation sensitive resin composition for forming barrier ribs for an EL display element, barrier rib and EL display element | JSR CORPORATION (JP) | 2001-11-22 | — | — | US | disclosed |
| EP-1150165-A1 | Radiation sensitive resin composition for forming barrier ribs for an el display element, barrier ribs and el display element | JSR Corporation (JP) | 2001-10-31 | — | — | EP | disclosed |