⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3207719 | 0.50 | — | — | |
| Krypton Kr 81M SCHEMBL30924272 | 0.41 | — | — | |
| Hydrogen Sulfide SCHEMBL482591 | 0.41 | — | — | |
| Iodide SCHEMBL2675855 | 0.41 | — | — | |
| Hydrogen Sulfide SCHEMBL15941638 | 0.41 | — | — | |
| SCHEMBL23462150 | 0.00 | — | — | |
| SCHEMBL25435809 | 0.00 | — | — | |
| SCHEMBL23235911 | 0.00 | — | — | |
| Hydrogen Sulfide SCHEMBL23805181 | 0.00 | — | — | |
| Methane SCHEMBL23795058 | 0.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9896326-B2 | FCVD line bending resolution by deposition modulation | APPLIED MATERIALS, INC. (US) | 2018-02-20 | — | — | US | claimed |
| US-20160181089-A1 | FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION | APPLIED MATERIALS, INC. (US) | 2016-06-23 | — | — | US | claimed |
| US-20260150635-A1 | INHIBITED ATOMIC LAYER DEPOSITION FOR PATTERNING APPLICATIONS | LAM RESEARCH CORPORATION (US) | 2026-05-28 | — | — | US | disclosed |
| CN-122029303-A | Seamless gap filling by suppressed atomic layer deposition | 朗姆研究公司 | 2026-05-12 | — | — | CN | disclosed |
| US-12622232-B2 | Advanced self aligned multiple patterning using tin oxide | LAM RESEARCH CORPORATION (US) | 2026-05-05 | — | — | US | disclosed |
| US-20260098333-A1 | INHIBITED OXIDE DEPOSITION FOR REFILLING SHALLOW TRENCH ISOLATION | LAM RES CORP (US) | 2026-04-09 | — | — | US | disclosed |
| US-12598930-B2 | Conformal thermal CVD with controlled film properties and high deposition rate | LAM RESEARCH CORPORATION (US) | 2026-04-07 | — | — | US | disclosed |
| US-20260090294-A1 | DOPED SILICON OR BORON LAYER FORMATION | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-20260078484-A1 | LAYERED METAL OXIDE-SILICON OXIDE FILMS | LAM RES CORP (US) | 2026-03-19 | — | — | US | disclosed |
| CN-121586788-A | Treatment chamber pre-coating with trapping layer and sealing layer | 朗姆研究公司 | 2026-02-27 | — | — | CN | disclosed |
| US-20260011549-A1 | IN-SITU CONTROL OF FILM PROPERTIES DURING ATOMIC LAYER DEPOSITION | LAM RES CORP (US) | 2026-01-08 | — | — | US | disclosed |
| US-20090208880-A1 | PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH | APPLIED MATERIALS, INC. (US) | 2009-08-20 | — | — | US | disclosed |
| EP-2082078-A2 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | Applied Materials, INC. (US) | 2009-07-29 | — | — | EP | disclosed |
| US-20090104791-A1 | Methods for Forming a Silicon Oxide Layer Over a Substrate | APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) | 2009-04-23 | — | — | US | disclosed |
| US-20090104791-A1 | Methods for Forming a Silicon Oxide Layer Over a Substrate | APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) | 2009-04-23 | — | — | US | disclosed |
| US-7498273-B2 | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes | APPLIED MATERIALS, INC. (US) | 2009-03-03 | — | — | US | disclosed |
| US-7498273-B2 | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes | APPLIED MATERIALS, INC. (US) | 2009-03-03 | — | — | US | disclosed |
| WO-2008048862-A2 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2008-04-24 | — | — | WO | disclosed |
| US-20070281495-A1 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2007-12-06 | — | — | US | disclosed |
| US-20070281495-A1 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2007-12-06 | — | — | US | disclosed |