⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23877690 | 0.83 | — | — | |
| SCHEMBL30917991 | 0.82 | — | — | |
| SCHEMBL8735126 | 0.79 | — | — | |
| SCHEMBL3068640 | 0.65 | — | — | |
| SCHEMBL27883711 | 0.63 | — | — | |
| SCHEMBL13399574 | 0.63 | — | — | |
| SCHEMBL3628169 | 0.63 | — | — | |
| SCHEMBL4576759 | 0.61 | — | — | |
| SCHEMBL276152 | 0.61 | — | — | |
| SCHEMBL1230809 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0023988-B1 | USE OF A CONDUCTIVE ORGANIC CHARGE TRANSFER MATERIAL AS ELECTRON BEAM SENSITIVE RESIST COMPOSITION, AND METHOD OF FORMING POSITIVE AND NEGATIVE RESIST IMAGES | International Business Machines Corporation (US) | 1984-02-29 | — | — | EP | claimed |
| EP-0023988-A2 | Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images | International Business Machines Corporation (US) | 1981-02-18 | — | — | EP | claimed |
| CN-114175293-A | Bispyrans, dithiodipyrans and diseleno-dipyrans and use thereof | 塞勒锐科有限公司 | 2022-03-11 | — | — | CN | disclosed |
| CN-114175293-A | Bispyrans, dithiodipyrans and diseleno-dipyrans and use thereof | 塞勒锐科有限公司 | 2022-03-11 | — | — | CN | disclosed |
| EP-0023988-B1 | USE OF A CONDUCTIVE ORGANIC CHARGE TRANSFER MATERIAL AS ELECTRON BEAM SENSITIVE RESIST COMPOSITION, AND METHOD OF FORMING POSITIVE AND NEGATIVE RESIST IMAGES | International Business Machines Corporation (US) | 1984-02-29 | — | — | EP | disclosed |
| EP-0023988-A2 | Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images | International Business Machines Corporation (US) | 1981-02-18 | — | — | EP | disclosed |