SCHEMBL11079664

SCHEMBL11079664

O=[Sn].[Ge]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Magnesium SCHEMBL31635854 0.89
SCHEMBL1204286 0.89
SCHEMBL3138689 0.89
SCHEMBL4074531 0.89
SCHEMBL5713148 0.89
SCHEMBL28610196 0.87
SCHEMBL180008 0.87
SCHEMBL28937502 0.87
SCHEMBL3142502 0.82
SCHEMBL5411677 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10337927-B1 Germanium tin oxide thin films for uncooled infrared detectors DELAWARE STATE UNIVERSITY 2019-07-02 US claimed
CN-121737485-B Method for recycling germanium tin from germanium tin alloy waste and special chlorination separation device Chaoyang Jinmei gallium Industry Co.,Ltd. (CN) 2026-05-26 CN disclosed
US-20260123001-A1 METHOD FOR HORIZONTAL GAP FILLING IN SEMICONDUCTOR MANUFACTURING TOKYO ELECTRON LIMITED (JP) 2026-04-30 US disclosed
US-12615801-B2 Multi-gate transistors having deep inner spacers TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-28 US disclosed
US-20250351464-A1 MULTI-GATE TRANSISTORS AND METHODS OF FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-13 US disclosed
US-20250351451-A1 MULTI-GATE TRANSISTORS HAVING DEEP INNER SPACERS TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-13 US disclosed
US-20250293031-A1 SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-09-18 US disclosed
US-12315730-B2 Semiconductor devices with metal intercalated high-k capping TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-05-27 US disclosed
US-20250015140-A1 GERMANIUM TIN GATE-ALL-AROUND DEVICE Taiwean Semiconductor Manufacturing Company, Ltd. (TW) 2025-01-09 US disclosed
US-20250006746-A1 DRIVE SUBSTRATES AND DISPLAY PANELS SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) 2025-01-02 US disclosed
WO-2023077305-A1 CHIP, PHOTOELECTRIC CONVERSION DEVICE, OPTICAL MODULE, AND OPTICAL COMMUNICATION SYSTEM 华为技术有限公司 2023-05-11 WO disclosed
CN-115832024-A Method for manufacturing semiconductor device and semiconductor device 台湾积体电路制造股份有限公司 2023-03-21 CN disclosed
US-11600703-B2 Germanium tin gate-all-around device TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-03-07 US disclosed
US-20230058459-A1 MULTI-GATE TRANSISTORS HAVING DEEP INNER SPACERS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-02-23 US disclosed
US-20230054243-A1 MULTI-GATE TRANSISTORS AND METHODS OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-02-23 US disclosed
CN-115528087-A Semiconductor structure and manufacturing method thereof 台湾积体电路制造股份有限公司 2022-12-27 CN disclosed
CN-115528088-A Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2022-12-27 CN disclosed
US-20220246726-A1 GERMANIUM TIN GATE-ALL-AROUND DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-08-04 US disclosed
CN-114530484-A Semiconductor device and method for fabricating the same 台湾积体电路制造股份有限公司 2022-05-24 CN disclosed
EP-0107357-A2 Apparatus and method for making large area photovoltaic devices incorporating back reflectors ENERGY CONVERSION DEVICES, INC. (US) 1984-05-02 EP disclosed