⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10115802 | 0.90 | — | — | |
| SCHEMBL11890221 | 0.90 | — | — | |
| SCHEMBL108333 | 0.89 | — | — | |
| SCHEMBL12753778 | 0.88 | — | — | |
| SCHEMBL15197229 | 0.82 | — | — | |
| SCHEMBL12918928 | 0.81 | — | — | |
| SCHEMBL775899 | 0.80 | — | — | |
| SCHEMBL13430303 | 0.80 | — | — | |
| SCHEMBL2735057 | 0.79 | — | — | |
| SCHEMBL1627358 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9541831-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-9458343-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20160103395-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-04-14 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120288691-A1 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120088194-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20120058436-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120015301-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20110070544-A1 | Novel Salt Having Fluorine-Containing Carbanion Structure, Derivative Thereof, Photoacid Generator, Resist Material Using the Photoacid Generator, and Pattern Forming Method | Central Glass Company,Ltd. (JP) | 2011-03-24 | — | — | US | disclosed |
| US-20110020755-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-01-27 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |