Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.80 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.80 |
| ▸ | CYP2A6 | P11509 | 3/20 | 0.80 |
| ▸ | TSHR | P16473 | 3/20 | 0.80 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.80 |
| ▸ | HPRT1 | P00492 | 3/20 | 0.71 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.63 |
| ▸ | CYP1B1 | Q16678 | 1/20 | 0.63 |
| ▸ | PAX8 | Q06710 | 1/20 | 0.62 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 3/20 | 0.48 |
| ▸ | PTPN22 | Q9Y2R2 | 1/20 | 0.48 |
| ▸ | HPGD | P15428 | 3/20 | 0.48 |
| ▸ | THRB | P10828 | 1/20 | 0.48 |
| ▸ | MAPT | P10636 | 1/20 | 0.46 |
| ▸ | WDR5 | P61964 | 1/20 | 0.46 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phenanthrene SCHEMBL3291922 | 0.90 | CYP2A6 (0.86) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL8873977 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL29477074 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL7643 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL30932938 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL1330750 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL27458043 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL29358486 | 0.89 | CYP2A6 (1.00) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL25318236 | 0.86 | CYP2A6 (0.92) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 | |
| Phenanthrene SCHEMBL9994193 | 0.86 | CYP2A6 (0.92) | ALDH1A1HSD17B10CYP2A6TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119631160-A | Stripping agent composition for light irradiation stripping, laminate, and method for producing processed semiconductor substrate | 日产化学株式会社 | 2025-03-14 | — | — | CN | disclosed |
| CN-118786391-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2024-10-15 | — | — | CN | disclosed |
| CN-118507421-A | Laminate containing novolac resin as release layer | 日产化学株式会社 | 2024-08-16 | — | — | CN | disclosed |
| CN-111316401-B | Laminate containing novolac resin as release layer | 日产化学株式会社 | 2024-08-02 | — | — | CN | disclosed |
| CN-118117019-A | Surface roughening method based on wet treatment | 日产化学工业株式会社 | 2024-05-31 | — | — | CN | disclosed |
| CN-112218844-B | Compound, resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method | 三菱瓦斯化学株式会社 | 2024-04-26 | — | — | CN | disclosed |
| CN-117882172-A | Adhesive composition, laminate, and method for producing processed semiconductor substrate | 日产化学株式会社 | 2024-04-12 | — | — | CN | disclosed |
| CN-117716474-A | Method for producing laminate and kit of adhesive composition | 日产化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| CN-117501469-A | Composition for forming thin film for electrode of energy storage device | 日产化学株式会社 | 2024-02-02 | — | — | CN | disclosed |
| CN-117321502-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2023-12-29 | — | — | CN | disclosed |
| CN-106061627-B | Surface roughening method | 日产化学工业株式会社 | 2020-08-04 | — | — | CN | disclosed |
| CN-110809738-A | Composition for forming resist underlayer film with improved planarization | 日产化学株式会社 | 2020-02-18 | — | — | CN | disclosed |
| CN-110698331-A | Resist underlayer film forming composition containing substituted crosslinkable compound | 日产化学工业株式会社 | 2020-01-17 | — | — | CN | disclosed |
| CN-105324720-B | Resist underlayer film forming composition containing substituted crosslinkable compound | 日产化学工业株式会社 | 2020-01-03 | — | — | CN | disclosed |
| CN-107533291-A | Compound, resist composition, and resist pattern formation method using same | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| EP-2810969-B1 | NAPHTHALENE-FORMALDEHYDE RESIN, NAPHTHALENE-FORMALDEHYDE RESIN WITH BONDS FORMED BY DEACETALIZATION, AND MODIFIED NAPHTHALENE-FORMALDEHYDE RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-03-15 | — | — | EP | disclosed |
| US-9200105-B2 | Naphthalene formaldehyde resin, deacetalized naphthalene formaldehyde resin, and modified naphthalene formaldehyde resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-12-01 | — | — | US | disclosed |
| EP-2810969-A1 | NAPHTHALENE-FORMALDEHYDE RESIN, NAPHTHALENE-FORMALDEHYDE RESIN WITH BONDS FORMED BY DEACETALIZATION, AND MODIFIED NAPHTHALENE-FORMALDEHYDE RESIN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-12-10 | — | — | EP | disclosed |
| US-4352922-A | Method of producing an improved poly-(amide-imide) resin by reacting a phenanthrene with formaldehyde followed by oxidizing to produce a polycarboxylated product followed by reaction with an aromatic diamine | COAL INDUSTRY (PATENTS) LIMITED (GB) | 1982-10-05 | — | — | US | disclosed |
| EP-0036255-A1 | Method of producing an improved poly-(amide-imide) resin | Coal Industry (Patents) Limited (GB) | 1981-09-23 | — | — | EP | disclosed |