SCHEMBL1144035

SCHEMBL1144035

[H+].[H+].[H+].[N-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4582829 1.00
SCHEMBL875883 1.00
SCHEMBL9617082 0.82
SCHEMBL10495152 0.82
SCHEMBL4130934 0.82
SCHEMBL29538745 0.71
Ammonia Solution, Strong SCHEMBL28997679 0.71
SCHEMBL30135586 0.71
SCHEMBL10773596 0.71
SCHEMBL29548483 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 555 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024134907-A1 SUBSTRATE TREATMENT METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT SYSTEM, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2024-06-27 WO claimed
CN-118103960-A Film forming method, semiconductor device manufacturing method, film forming apparatus, and program 株式会社国际电气 2024-05-28 CN claimed
CN-114807903-B Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium 株式会社国际电气 2024-04-09 CN claimed
WO-2024047713-A1 SUBSTRATE PROCESSING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2024-03-07 WO claimed
WO-2023176020-A1 SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING DEVICE 株式会社KOKUSAI ELECTRIC 2023-09-21 WO claimed
CN-110660663-B Etching method and etching apparatus 株式会社日立高新技术 2023-06-16 CN claimed
CN-116180045-A Cleaning method of ultraviolet curing cavity 拓荆科技(上海)有限公司 2023-05-30 CN claimed
CN-115747761-A Film curing method 拓荆科技(上海)有限公司 2023-03-07 CN claimed
CN-115110059-A Method for manufacturing semiconductor device, method for processing substrate, recording medium, and substrate processing apparatus 株式会社国际电气 2022-09-27 CN claimed
CN-114807903-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium 株式会社国际电气 2022-07-29 CN claimed
EP-1265279-A1 FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR FORMING DIELECTRIC FILM OHMI, Tadahiro (JP) 2002-12-11 EP claimed
US-20020160622-A1 METHODS OF HEAT TREATMENT AND HEAT TREATMENT APPARATUS FOR SILICON OXIDE FILMS YAMAZAKI SHUNPEI (JP) 2002-10-31 US claimed
US-20020040847-A1 Modifying dielectric overcoating on substrate FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE (JP) 2002-04-11 US claimed
US-20020025691-A1 Flash memory device and a fabrication process thereof, method of forming a dielectric film FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE (JP) 2002-02-28 US claimed
US-20020014666-A1 Semiconductor device formed on (111) surface of a si crystal and fabrication process thereof TADAHIRO, OHMI (JP) 2002-02-07 US claimed
US-5840600-A Method for producing semiconductor device and apparatus for treating semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1998-11-24 US claimed
US-5817549-A Method for manufacturing a semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1998-10-06 US claimed
US-5095129-A Antiglucocorticoid, antimineralcorticoid, antiandrogen SCHERING AKTIENGESELLSCHAFT (DE) 1992-03-10 US claimed
US-4717602-A Method for producing silicon nitride layers SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1988-01-05 US claimed
US-4704300-A Method for producing silicon nitride layer SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1987-11-03 US claimed