SCHEMBL11519646

SCHEMBL11519646

CC(C)(C)OC(=O)OC1CCCCC1

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 4/20 0.44
CYP19A1 P11511 2/20 0.42
NAAA Q02083 2/20 0.41
GAA P10253 1/20 0.40
HTT P42858 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
CYP2C19 P33261 1/20 0.38
CA12 O43570 2/20 0.38
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
CA9 Q16790 2/20 0.38
HPGD P15428 1/20 0.38
CACNA1B Q00975 3/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11593346 1.00 EPHX1 (0.44) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL11591027 1.00 EPHX1 (0.44) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL11592616 1.00 EPHX1 (0.44) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL11592227 1.00 EPHX1 (0.44) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL26635785 0.98 EPHX1 (0.41) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL1079567 0.96 EPHX1 (0.46) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL26635790 0.94 BTK (0.39) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL1078293 0.91 EPHX1 (0.42) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL1080294 0.91 EPHX1 (0.42) EPHX1CYP19A1NAAAGAAHTT
SCHEMBL737178 0.90 EPHX1 (0.41) EPHX1CYP19A1NAAAGAAHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116854592-A Synthetic method of tert-butyl carbonate compound 内蒙古习尚喜新材料科技有限公司 2023-10-10 CN disclosed
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9624356-B2 Ultraviolet absorber, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMIAL CO., LTD (JP) 2017-04-18 US disclosed
US-9624356-B2 Ultraviolet absorber, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMIAL CO., LTD (JP) 2017-04-18 US disclosed
US-20130284698-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130284699-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130284698-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-4170610-A HEAT RESISTANT WACKER-CHEMIE GMBH (DE) 1979-10-09 US disclosed