Butanol

Butanol

SCHEMBL11636263

CCC(C)O.CCN

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butanol SCHEMBL8863956 0.92
Butanol SCHEMBL28271138 0.88
Butanol SCHEMBL55899 0.88
Butanol SCHEMBL1418 0.88
Butanol SCHEMBL55049 0.88
Butanol SCHEMBL2012224 0.88 TSHR (1.00)
Butanol SCHEMBL9506830 0.85 TSHR (0.56)
Butanol SCHEMBL7908046 0.84
Butanol SCHEMBL1554783 0.84
Butanol SCHEMBL22118216 0.84 TSHR (0.91)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110361941-A A kind of positive photoresist stripper, preparation method and application 上海新阳半导体材料股份有限公司 2019-10-22 CN claimed
CN-110262199-A A kind of negtive photoresist stripper, preparation method and application 上海新阳半导体材料股份有限公司 2019-09-20 CN claimed
CN-104024394-B method and composition for removing material from a substrate 慧盛材料美国有限责任公司 2019-07-16 CN claimed
CN-110361941-A A kind of positive photoresist stripper, preparation method and application 上海新阳半导体材料股份有限公司 2019-10-22 CN disclosed
CN-110262199-A A kind of negtive photoresist stripper, preparation method and application 上海新阳半导体材料股份有限公司 2019-09-20 CN disclosed
CN-104024394-B method and composition for removing material from a substrate 慧盛材料美国有限责任公司 2019-07-16 CN disclosed
CN-107690488-B Multilayer film etching solution and etching concentrate and engraving method 松下知识产权经营株式会社 2019-03-01 CN disclosed
CN-109415818-A Etching solution for copper thick film 松下知识产权经营株式会社 2019-03-01 CN disclosed
CN-106460197-B Etching solution and etching concentrated solution for multilayer film and etching method 松下知识产权经营株式会社 2019-02-22 CN disclosed
CN-106255777-B Etching solution for multilayer film containing molybdenum and copper, etching concentrate, and etching method 松下知识产权经营株式会社 2018-03-20 CN disclosed
CN-107690488-A Multilayer film etching solution and etching concentrate and engraving method 松下知识产权经营株式会社 2018-02-13 CN disclosed
CN-103959172-A Process for removing substances from substrates DYNALOY LLC 2014-07-30 CN disclosed
CN-100472331-C Dephotoresist agent MITSUBISHI GAS CHEMICAL CO (JP) 2009-03-25 CN disclosed
CN-101093364-A Stripping liquid for photo-induced resist and base plate processing method using the same TOKYO OHKA KOGYO CO LTD (JP) 2007-12-26 CN disclosed
CN-100338530-C Method for releasing resist MITSUBISHI GAS CHEMICAL CO (JP) 2007-09-19 CN disclosed
CN-1312535-C Optical photoresist stripping composition and cleaning composition MITSUBISHI GAS CHEMICAL CO (JP) 2007-04-25 CN disclosed
CN-1578932-A Method for releasing resist MITSUBISHI GAS CHEMICAL CO (JP) 2005-02-09 CN disclosed
CN-1517803-A Dephotoresist agent 三菱瓦斯化学株式会社 2004-08-04 CN disclosed
CN-1444103-A Optical photoresist stripping composition and cleaning composition MITSUBISHI GAS CHEMICAL CO (JP) 2003-09-24 CN disclosed
US-4103087-A REACTING TERTIARY AMINOALKANOL WITH A SECONDARY AMINE IN PRESENCE OF AN ALUMINUM PHOSPHATE CATALYST TEXACO DEVELOPMENT CORPORATION (US) 1978-07-25 US disclosed