⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrogen Sulfide SCHEMBL18763385 | 1.00 | — | — | |
| Hydrogen Sulfide SCHEMBL15813252 | 1.00 | — | — | |
| Hydrogen Sulfide SCHEMBL20981711 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL28305085 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL20474505 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL6047992 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL17965686 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL2410090 | 0.71 | — | — | |
| Hydrogen Sulfide SCHEMBL1499803 | 0.71 | — | — | |
| Hydrogen Sulfide SCHEMBL5509124 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118127266-A | Novel inhibitor-niobium trisulfide suitable for preparing oriented silicon steel by heating low-temperature plate blank and method for preparing oriented silicon steel | 东北大学 | 2024-06-04 | — | — | CN | claimed |
| CN-113697856-B | NbS (NbS) 2 Solvent thermal preparation method of nano-sheet self-assembled hollow microsphere | 齐齐哈尔大学 | 2023-05-02 | — | — | CN | claimed |
| US-10734378-B2 | Transistor threshold voltage variation optimization | INTEL CORPORATION (US) | 2020-08-04 | — | — | US | claimed |
| CN-109321841-A | A kind of yield strength is greater than the continuously dip coat 55%Al-Zn alloyed steel strip and preparation method thereof of 560MPa | 甘肃酒钢集团宏兴钢铁股份有限公司 | 2019-02-12 | — | — | CN | claimed |
| US-20190019793-A1 | TRANSISTOR THRESHOLD VOLTAGE VARIATION OPTIMIZATION | INTEL CORPORATION (US) | 2019-01-17 | — | — | US | claimed |
| WO-2017171860-A1 | TRANSISTOR THRESHOLD VOLTAGE VARIATION OPTIMIZATION | INTEL CORPORATION (US) | 2017-10-05 | — | — | WO | claimed |
| US-12234177-B2 | Coated glass or glass ceramic substrate, coating comprising closed pores, and method for coating a substrate | SCHOTT AG (DE) | 2025-02-25 | — | — | US | disclosed |
| CN-118127266-A | Novel inhibitor-niobium trisulfide suitable for preparing oriented silicon steel by heating low-temperature plate blank and method for preparing oriented silicon steel | 东北大学 | 2024-06-04 | — | — | CN | disclosed |
| CN-118127266-A | Novel inhibitor-niobium trisulfide suitable for preparing oriented silicon steel by heating low-temperature plate blank and method for preparing oriented silicon steel | 东北大学 | 2024-06-04 | — | — | CN | disclosed |
| CN-117888027-A | Novel inhibitor oriented silicon steel heated by low-temperature slab and preparation method thereof | 东北大学 | 2024-04-16 | — | — | CN | disclosed |
| CN-117888027-A | Novel inhibitor oriented silicon steel heated by low-temperature slab and preparation method thereof | 东北大学 | 2024-04-16 | — | — | CN | disclosed |
| CN-115716640-B | Niobium telluride-based one-dimensional material and preparation method and application thereof | 哈尔滨工业大学 | 2024-03-19 | — | — | CN | disclosed |
| US-11673826-B2 | Decorative coating having increased IR reflection | SCHOTT AG (DE) | 2023-06-13 | — | — | US | disclosed |
| US-20230035460-A1 | COATED GLASS OR GLASS CERAMIC SUBSTRATE, COATING COMPRISING CLOSED PORES, AND METHOD FOR COATING A SUBSTRATE | SCHOTT AG (DE) | 2023-02-02 | — | — | US | disclosed |
| US-11420901-B2 | Coated glass or glass ceramic substrate, coating comprising closed pores, and method for coating a substrate | SCHOTT AG (DE) | 2022-08-23 | — | — | US | disclosed |
| US-10734378-B2 | Transistor threshold voltage variation optimization | INTEL CORPORATION (US) | 2020-08-04 | — | — | US | disclosed |
| US-20190256406-A1 | DECORATIVE NON-POROUS LAYERS FOR ION-EXCHANGEABLE GLASS SUBSTRATES | CORNING INCORPORATED | 2019-08-22 | — | — | US | disclosed |
| US-20190019793-A1 | TRANSISTOR THRESHOLD VOLTAGE VARIATION OPTIMIZATION | INTEL CORPORATION (US) | 2019-01-17 | — | — | US | disclosed |
| WO-2017171860-A1 | TRANSISTOR THRESHOLD VOLTAGE VARIATION OPTIMIZATION | INTEL CORPORATION (US) | 2017-10-05 | — | — | WO | disclosed |
| US-4062904-A | Removal of hydroxyl-, carboxy-, or amino substituents from aromatic compounds using a group VI B catalyst | UOP INC. (US) | 1977-12-13 | — | — | US | disclosed |