SCHEMBL1187334

SCHEMBL1187334

[Mn].[Rh]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28037254 0.82
SCHEMBL6032950 0.82
SCHEMBL7715541 0.82
SCHEMBL28491762 0.82
SCHEMBL315311 0.82
SCHEMBL7907314 0.82
SCHEMBL28322228 0.82
SCHEMBL23235911 0.71
SCHEMBL712149 0.71
SCHEMBL10364713 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 466 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240107892-A1 MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABILITY OF MAGNETIC PERFORMANCE APPLE INC. 2024-03-28 US claimed
CN-116603524-B Rh (rhodium)&amp;MnO 2 Composite catalyst and preparation method and application thereof 杭州师范大学钱江学院 2023-10-20 CN claimed
CN-116603524-A Rh (rhodium)&amp;MnO 2 Composite catalyst and preparation method and application thereof 杭州师范大学钱江学院 2023-08-18 CN claimed
US-20210238484-A1 BULK-METAL CRYSTALLINE TRANSITION METAL BASED HETEROGENEOUS CATALYSTS, METHODS OF MAKING AND USES THEREOF SABIC GLOBAL TECHNOLOGIES B.V. (NL) 2021-08-05 US claimed
EP-3801887-A1 BULK-METAL CRYSTALLINE TRANSITION METAL BASED HETEROGENEOUS CATALYSTS, METHODS OF MAKING AND USES THEREOF SABIC Global Technologies B.V. (NL) 2021-04-14 EP claimed
US-10644229-B2 Magnetoresistive random access memory cell and fabricating the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2020-05-05 US claimed
US-9178136-B2 Magnetoresistive random access memory cell and fabricating the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-11-03 US claimed
US-20140077319-A1 MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF KABUSHIKI KAISHA TOSHIBA (JP) 2014-03-20 US claimed
US-20140048893-A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY CELL AND FABRICATING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2014-02-20 US claimed
CN-103594618-A Magnetoresistive random access memory cell and method of manufacturing the same TAIWAN SEMICONDUCTOR MFG 2014-02-19 CN claimed
US-6801415-B2 Nanocrystalline layers for improved MRAM tunnel junctions FREESCALE SEMICONDUCTOR, INC. 2004-10-05 US claimed
US-6714446-B1 Magnetoelectronics information device having a compound magnetic free layer MOTOROLA, INC. 2004-03-30 US claimed
WO-2004021372-A1 AMORPHOUS ALLOYS FOR MAGNETIC DEVICES FREESCALE SEMICONDUCTOR, INC. (US) 2004-03-11 WO claimed
US-20040041183-A1 Amorphous alloys for magnetic devices HEADWAY TECHNOLOGIES, INC. 2004-03-04 US claimed
US-20040042128-A1 Nanocrystalline layers for improved MRAM tunnel junctions HEADWAY TECHNOLOGIES, INC. 2004-03-04 US claimed
US-20030011941-A1 Spin-valve type magnetoresistive element and its manufacturing method TDK CORPORATION (JP) 2003-01-16 US claimed
US-6282069-B1 Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer ALPS ELECTRIC CO., LTD. (JP) 2001-08-28 US claimed
US-4735853-A HIGH STRENGHT, CORROSION RESISTANCE HITACHI, LTD. (JP) 1988-04-05 US claimed
US-4197220-A Impregnated metal-polymeric functional beads CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 1980-04-08 US claimed
US-3992468-A Process for the catalytic hydrodealkylation of alkylaromatic hydrocarbons INSTITUT FRANCAIS DU PETROLE, DES CARBURANTS ET LUBRIFIANTS ET ENTREPRISE DE RECHERCHES ET D'ACTIVITIES PETROLIERES ELF (FR) 1976-11-16 US claimed