SCHEMBL11890213

SCHEMBL11890213

CCC(C)(C)C(=O)OC1(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17717769 1.00
SCHEMBL17717756 1.00
SCHEMBL17717759 0.98
SCHEMBL12121813 0.77
SCHEMBL12396506 0.75
SCHEMBL17068805 0.74
SCHEMBL14747361 0.74
SCHEMBL17717775 0.74
SCHEMBL13103089 0.73 CYP4F2 (0.33)
SCHEMBL112871 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9581904-B2 Photoresist overcoat compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-02-28 US disclosed
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160320699-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
US-20160124309-A1 PATTERN FORMATION METHODS ROHM & HAAS ELECT MAT (US) 2016-05-05 US disclosed
US-20160122574-A1 PHOTORESIST OVERCOAT COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-05-05 US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9046766-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same FUJIFILM CORPORATION (JP) 2015-06-02 US disclosed
US-9046782-B2 Resist composition for negative tone development and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-06-02 US disclosed
US-9017917-B2 Resist composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2015-04-28 US disclosed
US-9012123-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-04-21 US disclosed
US-20090011362-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-08 US disclosed
US-20080305433-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080305432-A1 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080305429-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080241737-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed