SCHEMBL11965859

SCHEMBL11965859

CCOCC1CC2CC1C1C3CCC(C3)C21

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13124990 0.93
SCHEMBL14598910 0.83
SCHEMBL24391417 0.81
SCHEMBL13016893 0.79
SCHEMBL31379466 0.79
SCHEMBL11965858 0.77
SCHEMBL13177509 0.77
SCHEMBL2739901 0.77
SCHEMBL13902788 0.76
SCHEMBL13177406 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-8293458-B2 Method for forming fine pattern in semiconductor device Dongjin Semichem .Co., Ltd. (KR) 2012-10-23 US disclosed
US-8293458-B2 Method for forming fine pattern in semiconductor device Dongjin Semichem .Co., Ltd. (KR) 2012-10-23 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-20110144295-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2011-06-16 US disclosed
EP-2230552-A2 Method for forming fine pattern in semiconductor device DONGJIN SEMICHEM CO., LTD (KR) 2010-09-22 EP disclosed
US-20100233622-A1 METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE DONGJIN SEMICHEM CO., LTD. (KR) 2010-09-16 US disclosed
US-20100233622-A1 METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE DONGJIN SEMICHEM CO., LTD. (KR) 2010-09-16 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed