⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL266065 | 0.87 | — | — | |
| SCHEMBL30969436 | 0.75 | — | — | |
| SCHEMBL30969434 | 0.75 | — | — | |
| SCHEMBL16053758 | 0.75 | — | — | |
| SCHEMBL31098891 | 0.67 | — | — | |
| SCHEMBL145798 | 0.67 | — | — | |
| SCHEMBL31040464 | 0.61 | — | — | |
| SCHEMBL6694498 | 0.50 | — | — | |
| SCHEMBL19312 | 0.50 | — | — | |
| SCHEMBL4218614 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7897953-B2 | Multi-level programmable PCRAM memory | MICRON TECHNOLOGY, INC. (US) | 2011-03-01 | — | — | US | claimed |
| US-20090180314-A1 | MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY | MICRON TECHNOLGY, INC. | 2009-07-16 | — | — | US | claimed |
| US-12396379-B2 | Semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-08-19 | — | — | US | disclosed |
| CN-110875069-B | Memory device | 三星电子株式会社 | 2024-05-28 | — | — | CN | disclosed |
| US-20230165174-A1 | SEMICONDUCTOR DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-05-25 | — | — | US | disclosed |
| US-11205682-B2 | Memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-12-21 | — | — | US | disclosed |
| US-20210193916-A1 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE | MICRON TECHNOLOGY INC (US) | 2021-06-24 | — | — | US | disclosed |
| US-10879459-B2 | Phase change memory cell with constriction structure | MICRON TECHNOLOGY, INC. (US) | 2020-12-29 | — | — | US | disclosed |
| US-10777739-B2 | Phase change memory cell with constriction structure | MICRON TECHNOLOGY, INC. (US) | 2020-09-15 | — | — | US | disclosed |
| US-20200075675-A1 | MEMORY DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-05 | — | — | US | disclosed |
| US-10008664-B2 | Phase change memory cell with constriction structure | MICRON TECHNOLOGY, INC. (US) | 2018-06-26 | — | — | US | disclosed |
| US-7852658-B2 | Phase change memory cell with constriction structure | MICRON TECHNOLOGY, INC. (US) | 2010-12-14 | — | — | US | disclosed |
| US-7821810-B2 | Phase change memory adaptive programming | MICRON TECHNOLOGY, INC. (US) | 2010-10-26 | — | — | US | disclosed |
| WO-2009114162-A1 | NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| WO-2009114177-A2 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| US-20090231910-A1 | NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| WO-2009114200-A1 | PHASE CHANGE MEMORY ADAPTIVE PROGRAMMING | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| US-20090231912-A1 | PHASE CHANGE MEMORY ADAPTIVE PROGRAMMING | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| US-20090231911-A1 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| US-20090180314-A1 | MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY | MICRON TECHNOLGY, INC. | 2009-07-16 | — | — | US | disclosed |