Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.32 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9244581 | 0.82 | CA1 (0.32) | — | |
| SCHEMBL12119737 | 0.81 | TSHR (0.32) | TSHRTHRB | |
| Tetrabuthylammonium SCHEMBL16820431 | 0.76 | TSHR (0.36) | TSHRHPGDTHRB | |
| SCHEMBL12119773 | 0.76 | TSHR (0.34) | TSHRHPGD | |
| SCHEMBL12119739 | 0.76 | TSHR (0.32) | TSHR | |
| SCHEMBL17424804 | 0.75 | — | — | |
| SCHEMBL8737424 | 0.75 | — | — | |
| SCHEMBL5935037 | 0.74 | TSHR (0.42) | TSHRHPGDTHRB | |
| SCHEMBL12119734 | 0.74 | TSHR (0.38) | TSHRHPGDTHRB | |
| SCHEMBL23519373 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8057985-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |