⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22402840 | 0.89 | — | — | |
| SCHEMBL15935806 | 0.88 | — | — | |
| SCHEMBL2681169 | 0.87 | — | — | |
| SCHEMBL13551670 | 0.86 | — | — | |
| SCHEMBL16020217 | 0.86 | — | — | |
| SCHEMBL13551696 | 0.86 | — | — | |
| SCHEMBL785952 | 0.86 | — | — | |
| SCHEMBL111755 | 0.85 | — | — | |
| SCHEMBL13943429 | 0.85 | — | — | |
| SCHEMBL13551690 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9841679-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-12-12 | — | — | US | disclosed |
| US-9791777-B2 | Active light sensitive or radiation sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20170097565-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-06 | — | — | US | disclosed |
| US-20170038685-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-9519213-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| US-20160347897-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160349613-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160313645-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-10-27 | — | — | US | disclosed |
| US-20160266488-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-09-15 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080124653-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080118863-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-22 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |