⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1485517 | 1.00 | — | — | |
| SCHEMBL1085847 | 1.00 | — | — | |
| SCHEMBL320222 | 0.84 | SMN1; SMN2 (0.50) | — | |
| SCHEMBL13266324 | 0.84 | SMN1; SMN2 (0.50) | — | |
| SCHEMBL590895 | 0.84 | SMN1; SMN2 (0.50) | — | |
| SCHEMBL6064611 | 0.84 | SMN1; SMN2 (0.50) | — | |
| SCHEMBL590894 | 0.84 | SMN1; SMN2 (0.50) | — | |
| SCHEMBL16126141 | 0.83 | SMN1; SMN2 (0.48) | — | |
| SCHEMBL16126140 | 0.83 | SMN1; SMN2 (0.48) | — | |
| SCHEMBL14116704 | 0.83 | SMN1; SMN2 (0.48) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 5617 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260147279-A1 | DEVELOPER COMPOSITION FOR METAL-CONTAINING PHOTORESIST, AND METHOD OF FORMING PATTERNS INCLUDING DEVELOPING METHOD USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2026-05-28 | — | — | US | claimed |
| US-20250377591-A1 | PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-12-11 | — | — | US | claimed |
| CN-114995058-B | Resin precursor composition, polyimide resin film containing resin precursor composition and application of polyimide resin film | 吉林奥来德光电材料股份有限公司 | 2025-05-06 | — | — | CN | claimed |
| CN-119620541-A | Preparation and application of bottom anti-reflection coating with high etching rate | 儒芯微电子材料（上海）有限公司 | 2025-03-14 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-119081003-A | Polymerization reaction technology and application of crosslinkable polymer | 厦门大学 | 2024-12-06 | — | — | CN | claimed |
| US-20240294771-A1 | ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER | Tan Kah Kee Innovation Laboratory (CN) | 2024-09-05 | — | — | US | claimed |
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| US-20060057494-A1 | Photoresist monomer having spiro cyclic ketal goup, polymer thereof and photoresit composition including the same | DONGJIN SEMICHEM CO., LTD. | 2006-03-16 | — | — | US | claimed |
| WO-2005109102-A1 | PHOTOACTIVE MONOMER, PHOTOSENSITIVE POLYMER AND CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION INCLUDING THE SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2005-11-17 | — | — | WO | claimed |
| CN-1693322-A | Manufacturing method of acrylic copolymer resin for layer insulation film for TFT-LCD | DONGJIN SAEMIGUNG CO LTD (KR) | 2005-11-09 | — | — | CN | claimed |
| US-20020132123-A1 | Thermosetting anti-reflective coatings for full-fill dual damascene process | BREWER SCIENCE, INC. | 2002-09-19 | — | — | US | claimed |
| US-6444320-B1 | CAN BE USED TO PROTECT CONTACT OR VIA HOLES FROM DEGRADATION DURING SUBSEQUENT ETCHING IN THE DUAL DAMASCENE | BREWER SCIENCE | 2002-09-03 | — | — | US | claimed |
| US-6379860-B1 | RESIN OBTAINED BY REACTION OF ALKALI-SOLUBLE RESIN HAVING PHENOLIC HYDROXYL GROUPS WITH ENOL ETHER DECOMPOSES IN ACID TO INCREASE SOLUBILITY; HEAT RESISTANCE, SENSITIVIY, RESOLUTION; GENERATES ACID UPON ACTINIC RADIATION EXPOSURE | FUJI PHOTO FILM CO., LTD. (JP) | 2002-04-30 | — | — | US | claimed |
| US-5359115-A | Reacting phosphonic monoester with dialkylazodicarboxylate, triphenylphosphine and secondary alcohol to form diester, hydrolyzing selective ester to form monoester, coupling an aminoacid to yield peptidylphosphonate | AFFYMAX TECHNOLOGIES, N.V. (US) | 1994-10-25 | — | — | US | claimed |
| EP-0211667-B1 | RADIATION-SENSITIVE RESIN COMPOSITION | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1992-03-11 | — | — | EP | claimed |
| EP-0457367-A1 | Radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1991-11-21 | — | — | EP | claimed |
| EP-0211667-A2 | Radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1987-02-25 | — | — | EP | claimed |