SCHEMBL12293161

SCHEMBL12293161

CCCS(=O)(=O)O/N=C(/c1ccc(OC)cc1)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
RECQL P46063 2/20 0.39
HDAC3 O15379 1/20 0.37
HDAC1 Q13547 1/20 0.37
HDAC2 Q92769 1/20 0.37
NR1I2 O75469 1/20 0.37
MEN1 O00255 1/20 0.36
LMNA P02545 1/20 0.36
MAPT P10636 1/20 0.36
KMT2A Q03164 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
ALDH1A1 P00352 2/20 0.36
GAA P10253 2/20 0.36
PTGS2 P35354 1/20 0.36
HPGD P15428 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
CES2 O00748 1/20 0.36
CES1 P23141 1/20 0.36
TAS1R3 Q7RTX0 1/20 0.35
TAS1R1 Q7RTX1 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7246388 1.00 RECQL (0.39) RECQLHDAC3HDAC1HDAC2NR1I2
SCHEMBL547036 0.91 HDAC3 (0.38) HDAC3HDAC1HDAC2PTGS2
SCHEMBL547037 0.91 HDAC3 (0.38) HDAC3HDAC1HDAC2PTGS2
SCHEMBL4900867 0.91 RECQL (0.39) RECQLHDAC3HDAC1HDAC2NR1I2
SCHEMBL4905883 0.89 RECQL (0.40) RECQLHDAC3HDAC1HDAC2NR1I2
SCHEMBL546644 0.88 PLA2G4B (0.42) LMNAMAPTGAA
SCHEMBL16869164 0.88 PTPN1 (0.35) LMNAMAPTGAA
SCHEMBL10138683 0.88 NPC1 (0.41) KMT2AALDH1A1TAS1R3TAS1R1
SCHEMBL3420948 0.88 KMT2A (0.39) MEN1LMNAKMT2AALDH1A1GAA
SCHEMBL546645 0.88 PLA2G4B (0.42) LMNAMAPTGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9086623-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film FUJIFILM CORPORATION (JP) 2015-07-21 US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 US disclosed
US-20130049149-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 US disclosed
WO-2011132764-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-10-27 WO disclosed
US-7244544-B2 Oxime derivatives and the use thereof as latent acids CIBA SPECIALTY CHEMICALS CORPORATION (US) 2007-07-17 US disclosed