SCHEMBL1230675

SCHEMBL1230675

[CH2]CCCCCCNCC[CH2]

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 3/20 0.38
TSHR P16473 2/20 0.38
CA12 O43570 2/20 0.38
F13A1 P00488 2/20 0.38
CA2 P00918 2/20 0.38
ALOX15 P16050 2/20 0.38
CA4 P22748 2/20 0.38
CA6 P23280 2/20 0.38
CYP2C19 P33261 2/20 0.38
CA5A P35218 2/20 0.38
THPO P40225 2/20 0.38
CA7 P43166 2/20 0.38
CA9 Q16790 2/20 0.38
CA14 Q9ULX7 2/20 0.38
CA5B Q9Y2D0 2/20 0.38
ALDH1A1 P00352 1/20 0.38
MEN1 O00255 1/20 0.38
CASP2 P42575 1/20 0.38
RECQL P46063 1/20 0.38
KMT2A Q03164 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1230682 0.94 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL8764297 0.94 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL5098312 0.94 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL10838909 0.94 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL5098259 0.94 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL5094912 0.90 CYP1A2 (0.40) CYP1A2TSHRCA12F13A1CA2
SCHEMBL1064909 0.87 CYP1A2 (0.42) CYP1A2TSHRCA12F13A1CA2
SCHEMBL4934708 0.87
SCHEMBL9487092 0.83 CA12 (0.47) CYP1A2TSHRCA12F13A1CA2
SCHEMBL25319285 0.82 CA12 (0.58) CYP1A2TSHRCA12F13A1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8658346-B2 Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-25 US disclosed
US-8426105-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
US-8329384-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100297554-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed
US-20100297563-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed