SCHEMBL123486

SCHEMBL123486

[As-3].[As-3].[Cd+2].[Cd+2].[Cd+2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10670836 0.82
SCHEMBL5537113 0.82
SCHEMBL727630 0.82
SCHEMBL29419916 0.71
Ammonia Solution, Strong SCHEMBL27759854 0.71
SCHEMBL28031532 0.71
SCHEMBL28816895 0.71
SCHEMBL10802613 0.50
SCHEMBL9616490 0.50
SCHEMBL4016633 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1068 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260032971-A1 Integrated Magnetic Circuit for Magnetoresistive Transistor IBM (US) 2026-01-29 US claimed
US-20250372521-A1 INTERCONNECT STRUCTURE INCLUDING TOPOLOGICAL MATERIAL TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-12-04 US claimed
US-12412837-B2 Interconnect structure including topological material TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-09-09 US claimed
CN-120137645-A Synthesis method of cadmium arsenide quantum dot 西湖大学 2025-06-13 CN claimed
CN-120137662-A Surface treatment and ligand exchange method for cadmium arsenide quantum dot 西湖大学 2025-06-13 CN claimed
CN-118448489-A Semi-metal terahertz detector integrated by silicon double micro-discs 浙江大学 2024-08-06 CN claimed
CN-113948605-B Photoelectric detector based on cadmium arsenide heterojunction and preparation method thereof 复旦大学 2024-07-23 CN claimed
US-12029141-B1 Systems and methods for resolving a number of incident RF-range photons NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC (US) 2024-07-02 US claimed
CN-118173659-A Method for large-area transfer of cadmium arsenide film based on molecular beam epitaxial growth and application thereof 南京大学 2024-06-11 CN claimed
EP-3631046-B1 OXIDIZING FLUID FOR THE CHEMICAL-MECHANICAL POLISHING OF CERAMIC MATERIALS SAINT GOBAIN CERAMICS (US) 2024-03-27 EP claimed
CN-1714459-A Method for manufacturing semiconductor device OSRAM OPTO SEMICONDUCTORS GMBH (DE) 2005-12-28 CN claimed
US-20050227063-A1 Plasmon nanoparticles and pixels, displays and inks using them SOLARIS NANOSCIENCES, INC. (US) 2005-10-13 US claimed
WO-2005074049-A2 POTENTIAL AMPLIFIED NONEQUILIBRIUM THERMAL ELECTRIC DEVICE (PANTEC) MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2005-08-11 WO claimed
US-20050155642-A1 Potential amplified nonequilibrium thermal electric device (PANTEC) MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2005-07-21 US claimed
US-5261968-A Low wavelength, high efficiency PHOTON ENERGY, INC. (US) 1993-11-16 US claimed
WO-1993014524-A1 PHOTOVOLTAIC CELL AND METHOD PHOTON ENERGY, INC. (US) 1993-07-22 WO claimed
EP-0161747-B1 SEMICONDUCTOR PRODUCTION METHOD Suda, Toshikazu (JP) 1988-05-11 EP claimed
EP-0161747-A1 Semiconductor production method Suda, Toshikazu (JP) 1985-11-21 EP claimed
US-4181913-A Resistive electrode amorphous semiconductor negative resistance device XEROX CORPORATION (US) 1980-01-01 US claimed
US-4109176-A INSULATING DIELECTRIC FOR GAS DISCHARGE DEVICE OWEN-ILLINOIS, INC. (US) 1978-08-22 US claimed