⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10115530 | 0.93 | — | — | |
| SCHEMBL576702 | 0.69 | — | — | |
| SCHEMBL14608287 | 0.67 | — | — | |
| SCHEMBL1923805 | 0.60 | — | — | |
| SCHEMBL204625 | 0.60 | — | — | |
| SCHEMBL108871 | 0.60 | — | — | |
| SCHEMBL576446 | 0.60 | — | — | |
| Iodide SCHEMBL31058312 | 0.58 | — | — | |
| Lithium Ion SCHEMBL29542897 | 0.58 | — | — | |
| SCHEMBL575419 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230161249-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2023-05-25 | — | — | US | disclosed |
| US-9703202-B2 | Surface treatment process and surface treatment liquid | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20160291477-A1 | SURFACE TREATMENT PROCESS AND SURFACE TREATMENT LIQUID | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9235117-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235117-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20150079508-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-20150079508-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-8702815-B2 | Cyanoborate, fluoroalkylphosphate, fluoroalkylborate or imide dyes | MERCK PATENT GMBH (DE) | 2014-04-22 | — | — | US | disclosed |
| US-20110190480-A1 | CYANOBORATE, FLUOROALKYLPHOSPHATE, FLUOROALKYLBORATE OR IMIDE DYES | IGNATYEV NIKOLAI MYKOLA | 2011-08-04 | — | — | US | disclosed |
| US-7846637-B2 | Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-12-07 | — | — | US | disclosed |
| US-20100203451-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-08-12 | — | — | US | disclosed |