SCHEMBL12414928

SCHEMBL12414928

CN(C)N(C)[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12236592 0.80
SCHEMBL5916261 0.75
SCHEMBL35296 0.72
Trimethylammonium SCHEMBL27331682 0.67
SCHEMBL27917221 0.67
SCHEMBL27771243 0.67
Ethane SCHEMBL3979179 0.67
SCHEMBL16758783 0.67
Hydrochloric Acid SCHEMBL21073904 0.67
Hydrochloric Acid SCHEMBL27747771 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9640386-B2 Precursors for CVD silicon carbo-nitride films VERSUM MATERIALS US, LLC (US) 2017-05-02 US disclosed
US-20150147893-A1 Precursors for CVD Silicon Carbo-Nitride Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-05-28 US disclosed
US-20150147893-A1 Precursors for CVD Silicon Carbo-Nitride Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-05-28 US disclosed
US-8932675-B2 Methods for depositing silicon carbo-nitride film AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-01-13 US disclosed
US-20130244448-A1 Precursors for CVD Silicon Carbo-Nitride Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-09-19 US disclosed
US-20130244448-A1 Precursors for CVD Silicon Carbo-Nitride Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-09-19 US disclosed
US-20110165346-A1 Precursors for CVD Silicon Carbo-Nitride Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-07-07 US disclosed
US-7875312-B2 silane precursor is reacted with an oxidizing agent; chemical vapor deposition; atomic layer deposition; facilitate formation of dielectric films at low thermal conditions; produce films having low acid etch rates; tune both the carbon and N2 content in the resulting silicon oxide film AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-01-25 US disclosed
US-20070275166-A1 Process for producing silicon oxide films from organoaminosilane precursors VERSUM MATERIALS US, LLC 2007-11-29 US disclosed
CN-1325410-A Polymerization of olefins DU PONT (US) 2001-12-05 CN disclosed