Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 4/20 | 0.90 |
| ▸ | CA1 | P00915 | 4/20 | 0.90 |
| ▸ | CA2 | P00918 | 4/20 | 0.90 |
| ▸ | CA7 | P43166 | 4/20 | 0.90 |
| ▸ | CA9 | Q16790 | 4/20 | 0.90 |
| ▸ | CA14 | Q9ULX7 | 4/20 | 0.90 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.90 |
| ▸ | MAPT | P10636 | 3/20 | 0.90 |
| ▸ | CA4 | P22748 | 3/20 | 0.90 |
| ▸ | CA6 | P23280 | 3/20 | 0.90 |
| ▸ | LMNA | P02545 | 3/20 | 0.90 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.90 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.90 |
| ▸ | FUT7 | Q11130 | 2/20 | 0.90 |
| ▸ | CA3 | P07451 | 2/20 | 0.90 |
| ▸ | CA5A | P35218 | 2/20 | 0.90 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.90 |
| ▸ | TP53 | P04637 | 1/20 | 0.90 |
| ▸ | SELL | P14151 | 1/20 | 0.90 |
| ▸ | HPGD | P15428 | 1/20 | 0.90 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Gallic Acid SCHEMBL10347877 | 0.97 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL10769174 | 0.97 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL3630315 | 0.97 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL109154 | 0.97 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL25221329 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL28424991 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL2505431 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL22973696 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL9398055 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL6036577 | 0.95 | CA12 (0.90) | CA12CA1CA2CA7CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2267190-B1 | Large area, uniformly low dislocation density gan substrate and process for making the same | CREE INC (US) | 2015-08-12 | — | — | EP | claimed |
| JP-4741506-B2 | — | — | 2011-08-03 | — | — | JP | claimed |
| US-7879147-B2 | Large area, uniformly low dislocation density GaN substrate and process for making the same | CREE, INC. (US) | 2011-02-01 | — | — | US | claimed |
| EP-2267190-A1 | Large area, uniformly low dislocation density gan substrate and process for making the same | Cree, Inc. (US) | 2010-12-29 | — | — | EP | claimed |
| CN-100577894-C | Large area, uniformly low dislocation density GaN substrate and process for making the same | CREE INC | 2010-01-06 | — | — | CN | claimed |
| US-7323256-B2 | Uncut single crystal III-V nitride (optionally doped) having a large area of at least 15 cm2 on a face and a uniformly low dislocation density not exceeding 3x106 dislocations per cm2 of growth surface area on the face; wafers for microelectronic and opto-electronic devices | CREE, INC. (US) | 2008-01-29 | — | — | US | claimed |
| US-20080003786-A1 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME | CREE, INC. (US) | 2008-01-03 | — | — | US | claimed |
| CN-1894446-A | Large area, uniform low dislocation density GaN substrate and process for making same | CREE INC (US) | 2007-01-10 | — | — | CN | claimed |
| EP-1682701-A2 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME | CREE, INC. (US) | 2006-07-26 | — | — | EP | claimed |
| WO-2005050709-A2 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME | CREE, INC. (US) | 2005-06-02 | — | — | WO | claimed |
| US-20050103257-A1 | Large area, uniformly low dislocation density GaN substrate and process for making the same | WOLFSPEED, INC. | 2005-05-19 | — | — | US | claimed |
| WO-2004053965-A1 | FREE STANDING SUBSTRATES BY LASER-INDUCED DECOHERENCY AND REGROWTH | CBL TECHNOLOGIES, INC (US) | 2004-06-24 | — | — | WO | claimed |
| US-6673149-B1 | Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD (JP) | 2004-01-06 | — | — | US | claimed |
| US-6498113-B1 | Free standing substrates by laser-induced decoherency and regrowth | CBL TECHNOLOGIES, INC. | 2002-12-24 | — | — | US | claimed |
| US-20020182889-A1 | FREE STANDING SUBSTRATES BY LASER-INDUCED DECOHERENCY AND REGROWTH | CBL TECHNOLOGIES | 2002-12-05 | — | — | US | claimed |
| WO-2002020880-A1 | PRODUCTION OF LOW DEFECT EPITAXIAL FILMS | CBL TECHNOLOGIES, INC. (US) | 2002-03-14 | — | — | WO | claimed |
| EP-2267190-B1 | Large area, uniformly low dislocation density gan substrate and process for making the same | CREE INC (US) | 2015-08-12 | — | — | EP | disclosed |
| US-8728236-B2 | Low dislocation density III-V nitride substrate including filled pits and process for making the same | CREE, INC. (US) | 2014-05-20 | — | — | US | disclosed |
| US-20020182889-A1 | FREE STANDING SUBSTRATES BY LASER-INDUCED DECOHERENCY AND REGROWTH | CBL TECHNOLOGIES | 2002-12-05 | — | — | US | disclosed |
| WO-2002020880-A1 | PRODUCTION OF LOW DEFECT EPITAXIAL FILMS | CBL TECHNOLOGIES, INC. (US) | 2002-03-14 | — | — | WO | disclosed |