SCHEMBL12610266

SCHEMBL12610266

CCCCCCCCc1cc(Br)sc1-c1ccc(-c2ccc(-c3sc(-c4ccc(-c5cc(CCCCCCCC)c(-c6ccc(-c7ccc(-c8sc(Br)cc8CCCCCCCC)s7)s6)s5)c5nsnc45)cc3CCCCCCCC)s2)s1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12887132 0.93 MEN1 (0.30) —
SCHEMBL14948636 0.91 MEN1 (0.30) —
SCHEMBL2608124 0.91 MEN1 (0.30) —
SCHEMBL15724624 0.90 MEN1 (0.31) —
SCHEMBL12610354 0.88 — —
SCHEMBL12887164 0.87 — —
SCHEMBL12587471 0.86 TYR (0.31) —
SCHEMBL12982335 0.86 TYR (0.31) —
SCHEMBL21300974 0.86 — —
SCHEMBL2050071 0.86 TYR (0.34) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12029106-B2 n-type semiconductor element, method for manufacturing n-type semiconductor element, wireless communication device, and merchandise tag TORAY INDUSTRIES, INC. (JP) 2024-07-02 — — US disclosed
US-12029106-B2 n-type semiconductor element, method for manufacturing n-type semiconductor element, wireless communication device, and merchandise tag TORAY INDUSTRIES, INC. (JP) 2024-07-02 — — US disclosed
US-20180210337-A1 PRODUCTION METHOD FOR ANTENNA SUBSTRATE, PRODUCTION METHOD FOR ANTENNA SUBSTRATE WITH WIRING LINE AND ELECTRODE, AND PRODUCTION METHOD FOR RFID ELEMENT TORAY INDUSTRIES, INC. (JP) 2018-07-26 — — US disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 — — US disclosed
US-8558108-B2 Electron donating material, material for photovoltaic devices and photovoltaic device TORAY INDUSTRIES, INC. (JP) 2013-10-15 — — US disclosed
US-8558108-B2 Electron donating material, material for photovoltaic devices and photovoltaic device TORAY INDUSTRIES, INC. (JP) 2013-10-15 — — US disclosed
US-8530889-B2 Carbon nanotube composite, organic semiconductor composite, and field-effect transistor TORAY INDUSTRIES, INC. (JP) 2013-09-10 — — US disclosed
US-8530889-B2 Carbon nanotube composite, organic semiconductor composite, and field-effect transistor TORAY INDUSTRIES, INC. (JP) 2013-09-10 — — US disclosed
US-20110121273-A1 CARBON NANOTUBE COMPOSITE, ORGANIC SEMICONDUCTOR COMPOSITE, AND FIELD-EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2011-05-26 — — US disclosed
US-20110121273-A1 CARBON NANOTUBE COMPOSITE, ORGANIC SEMICONDUCTOR COMPOSITE, AND FIELD-EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2011-05-26 — — US disclosed
US-20110023964-A1 ELECTRON DONATING MATERIAL, MATERIAL FOR PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICE TORAY INDUSTRIES, INC. (JP) 2011-02-03 — — US disclosed
US-20110023964-A1 ELECTRON DONATING MATERIAL, MATERIAL FOR PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICE TORAY INDUSTRIES, INC. (JP) 2011-02-03 — — US disclosed
Send feedback