SCHEMBL1270261

SCHEMBL1270261

O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].[Al+3].[Al+3].[NaH].[NaH].[Zn].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL77550 0.94
SCHEMBL11101362 0.94
SCHEMBL10579493 0.89
SCHEMBL10716658 0.89
SCHEMBL17352450 0.89
Potassium Ion SCHEMBL786582 0.89
SCHEMBL9784970 0.89
SCHEMBL1515670 0.89
SCHEMBL10534198 0.89
SCHEMBL17262 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7949217-B2 Selectively enhancing angular beam deflection FUJITSU LIMITED (JP) 2011-05-24 US disclosed
US-7889776-B2 High-power semiconductor laser TRUMPF PHOTONICS INC. (US) 2011-02-15 US disclosed
US-20090274409-A1 Selectively Enhancing Angular Beam Deflection FUJITSU LIMITED (JP) 2009-11-05 US disclosed
US-20080253421-A1 High-Power Semiconductor Laser TRUMPF PHOTONICS INC. 2008-10-16 US disclosed
EP-1726071-A4 HIGH-POWER SEMICONDUCTOR LASER TRUMPF PHOTONICS INC (US) 2008-03-26 EP disclosed
EP-1726071-A2 HIGH-POWER SEMICONDUCTOR LASER Trumpf Photonics, Inc. (US) 2006-11-29 EP disclosed
WO-2006025849-A2 HIGH-POWER SEMICONDUCTOR LASER TRUMPF PHOTONICS, INC. (US) 2006-03-09 WO disclosed