SCHEMBL12736997

SCHEMBL12736997

CCC(C)(C)C(=O)Oc1ccc(OC)cc1

nearest known ligand 0.58

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ELANE P08246 8/20 0.58
KMT2A Q03164 3/20 0.44
MEN1 O00255 2/20 0.44
CES2 O00748 1/20 0.44
CES1 P23141 1/20 0.44
LMNA P02545 2/20 0.44
MAPK1 P28482 2/20 0.44
HSD17B10 Q99714 2/20 0.44
CTBP2 P56545 1/20 0.44
ALDH1A1 P00352 1/20 0.44
ALOX15 P16050 1/20 0.44
APEX1 P27695 1/20 0.44
RECQL P46063 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
GAA P10253 1/20 0.44
RAB9A P51151 1/20 0.42
CA1 P00915 1/20 0.42
CA2 P00918 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17233803 0.92 ELANE (0.51) ELANEKMT2AMEN1LMNAMAPK1
SCHEMBL14791146 0.91 ELANE (0.61) ELANEKMT2ACES2CES1MAPK1
SCHEMBL2740712 0.89 ELANE (0.50) ELANEALDH1A1GAACA1CA2
SCHEMBL19164246 0.89 ELANE (0.62) ELANELMNAALDH1A1ALOX15L3MBTL1
SCHEMBL92310 0.87 ELANE (0.56) ELANEKMT2AMEN1ALDH1A1
SCHEMBL13191439 0.87 ELANE (0.47) ELANEKMT2AMEN1CES2CES1
SCHEMBL20408466 0.86 AKR1C3 (0.47) ELANEKMT2AMEN1LMNAHSD17B10
SCHEMBL14791152 0.85 MEN1 (0.60) ELANEKMT2AMEN1LMNATDP1
SCHEMBL18254167 0.85 MEN1 (0.60) ELANEKMT2AMEN1LMNATDP1
SCHEMBL13563645 0.85 ELANE (0.58) ELANEKMT2AMEN1LMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230139240-A1 RESIN COMPOSITION AND FILM TOPPAN INC. (JP) 2023-05-04 US disclosed
US-20230139240-A1 RESIN COMPOSITION AND FILM TOPPAN INC. (JP) 2023-05-04 US disclosed
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-9904169-B2 Photomask blank, resist pattern forming process, and method for making photomask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20160299431-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 US disclosed
US-20120276485-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-7923196-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-04-12 US disclosed
US-7923196-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-04-12 US disclosed
US-20100248146-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100248146-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed